SEMICONDUCTOR DEVICE

A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patternsat opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended fromthe first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper sidemay be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle. 一种半导体器件包括：第一有源鳍，其从衬底突出；第一栅极图案，其覆盖第一有源鳍的侧表面和顶表面；以及第一源极/漏极图案，其位于第一栅极图案的相对侧，第一源极/漏极图案中的每一个包括彼此间隔开的第一下侧和第二下侧、从第一下侧延伸的第一上侧、从第二下侧延伸的第二上侧。第一下侧可以相对于衬底的顶表面以第一角度倾斜，第二上侧可以相对于衬底的顶表面以第二角度倾斜，并且第一角度可以大于第二角度。