ORGANIC EL DISPLAY DEVICE

The present invention provides an organic EL display device using a top gate structure of an oxide semiconductor. The organic EL display device further reduces the resistance to moisture while reducing the resistance of the contact regions. A thin film transistor element substrate 1 of the organic E...

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description The present invention provides an organic EL display device using a top gate structure of an oxide semiconductor. The organic EL display device further reduces the resistance to moisture while reducing the resistance of the contact regions. A thin film transistor element substrate 1 of the organic EL display device includes a first moisture barrier layer 6 covering the gate insulating layer 4 andthe gate electrode 5, covering the contact regions 3a1,3a2 of the oxide semiconductor layer 3 other than the connecting portion of the contact region 3a1 connected to the source electrode 8 and the connecting portion of the contact region connected to the drain electrode 9, and covering an surface of the substrate 2 on which the oxide semiconductor layer 3 is not disposed. The first moisture barrier layer 6 includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer is formed by atomic layer deposition. 提供一种使用氧化物半导体的顶部栅极结构的有机EL显示装置,有机EL显示装置在实现接触区域的低电阻化的同时,进一步提高了对水分的阻隔性。有机EL显示装置的TF
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A thin film transistor element substrate 1 of the organic EL display device includes a first moisture barrier layer 6 covering the gate insulating layer 4 andthe gate electrode 5, covering the contact regions 3a1,3a2 of the oxide semiconductor layer 3 other than the connecting portion of the contact region 3a1 connected to the source electrode 8 and the connecting portion of the contact region connected to the drain electrode 9, and covering an surface of the substrate 2 on which the oxide semiconductor layer 3 is not disposed. The first moisture barrier layer 6 includes a metal oxide and is formed by atomic layer deposition. 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The organic EL display device further reduces the resistance to moisture while reducing the resistance of the contact regions. A thin film transistor element substrate 1 of the organic EL display device includes a first moisture barrier layer 6 covering the gate insulating layer 4 andthe gate electrode 5, covering the contact regions 3a1,3a2 of the oxide semiconductor layer 3 other than the connecting portion of the contact region 3a1 connected to the source electrode 8 and the connecting portion of the contact region connected to the drain electrode 9, and covering an surface of the substrate 2 on which the oxide semiconductor layer 3 is not disposed. The first moisture barrier layer 6 includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer is formed by atomic layer deposition. 提供一种使用氧化物半导体的顶部栅极结构的有机EL显示装置,有机EL显示装置在实现接触区域的低电阻化的同时,进一步提高了对水分的阻隔性。有机EL显示装置的TF</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ORGANIC EL DISPLAY DEVICE
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