Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a dielectric structure over the substrate;, and a cap layer over the dielectric structure, wherein a bottom portion of the cap layer has an M-type cross-sectional profile, and the cap layer and the dielectric structure are formed of different materials. The semiconductordevice can prevent the dielectric structure from being exposed in a subsequent etching manufacturing process to generate a path of electric leakage or short circuit to cause damage to the semiconductor device. 本发明提供一种半导体装置及其制造方法，该半导体装置包含：衬底；介电结构，位于衬底上方；以及盖层，位于介电结构上方，其中盖层的底部具有M型剖面轮廓，且盖层与介电结构由不同的材料形成。该半导体装置可避免介电结构在后续的刻蚀制造工艺中暴露出来而产生漏电或短路的路径，造成半导体装置损坏。