Preparation method of bismuth layered leadless piezoelectric ceramic
The invention discloses a preparation method of bismuth layered lead-free piezoelectric ceramic. The stoichiometric formula of raw materials is Ca1-2x(NaCe)xBi2Nb2O9. Adjustment of the raw material formula and improvement of the technology of a traditional solid-phase reaction method are carried out...
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| creator | ZHANG FEIYANG LOU YUE HUAN ZHENGLI MA LIZHI TANG FAJUN YAN FENG XU XUANYU |
| description | The invention discloses a preparation method of bismuth layered lead-free piezoelectric ceramic. The stoichiometric formula of raw materials is Ca1-2x(NaCe)xBi2Nb2O9. Adjustment of the raw material formula and improvement of the technology of a traditional solid-phase reaction method are carried out to adjust the content of A-site composite doped ions in order to improve electrochemical propertiesand prepare the lead-free piezoelectric ceramic with good comprehensive performances, the optimal sintering temperature is 1150 DEG C, and when the molar content x is equal to 0.05, the piezoelectricconstant d33 is equal to 17 pC/N, the Curie temperature Tc is equal to 908 DEG C, and the dielectric loss tan[delta] is equal to 0.45%. The lead-free piezoelectric ceramic material prepared in the invention is mainly applied to ultrasonic application, and detection of the acceleration and pressure of high-temperature objects, and the method for preparing the piezoelectric ceramic by the solid-phase reaction method is simp |
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The stoichiometric formula of raw materials is Ca1-2x(NaCe)xBi2Nb2O9. Adjustment of the raw material formula and improvement of the technology of a traditional solid-phase reaction method are carried out to adjust the content of A-site composite doped ions in order to improve electrochemical propertiesand prepare the lead-free piezoelectric ceramic with good comprehensive performances, the optimal sintering temperature is 1150 DEG C, and when the molar content x is equal to 0.05, the piezoelectricconstant d33 is equal to 17 pC/N, the Curie temperature Tc is equal to 908 DEG C, and the dielectric loss tan[delta] is equal to 0.45%. 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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
| title | Preparation method of bismuth layered leadless piezoelectric ceramic |
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