DEPTH SENSOR ELEMENT
The present invention provides a depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on twosides of the photogate in intervals. A first floating doped area and a second floating doped area ar...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TOM CHANG KAO-PIN WU |
| description | The present invention provides a depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on twosides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. Asemiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose forincreasing the reaction rate.
本发明为一种深度感测器元件，其于基板的感光区域中形成有感光栅极，该感光栅极的两相对侧分别间隔形成有一第一及第二传送栅极，又该基板上对应该第一及第二传送栅极的外侧分别间隔形成有一第一及第二浮接掺杂区，基板上形成有半导体区，半导体区上形成有轻掺杂区，感光栅极、第一及第二传送栅极、第一及第二浮接掺杂区下方共用该轻掺杂区，该轻掺杂区的杂质与该半导体区的杂质极性相异，该轻掺杂区的杂质与该第一及第二浮接 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110739319A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110739319A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110739319A3</originalsourceid><addsrcrecordid>eNrjZBBxcQ0I8VAIdvUL9g9ScPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGBubGlsaGlo7GxKgBAHcMHpg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEPTH SENSOR ELEMENT</title><source>esp@cenet</source><creator>TOM CHANG ; KAO-PIN WU</creator><creatorcontrib>TOM CHANG ; KAO-PIN WU</creatorcontrib><description>The present invention provides a depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on twosides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. Asemiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose forincreasing the reaction rate.
本发明为一种深度感测器元件，其于基板的感光区域中形成有感光栅极，该感光栅极的两相对侧分别间隔形成有一第一及第二传送栅极，又该基板上对应该第一及第二传送栅极的外侧分别间隔形成有一第一及第二浮接掺杂区，基板上形成有半导体区，半导体区上形成有轻掺杂区，感光栅极、第一及第二传送栅极、第一及第二浮接掺杂区下方共用该轻掺杂区，该轻掺杂区的杂质与该半导体区的杂质极性相异，该轻掺杂区的杂质与该第一及第二浮接</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200131&DB=EPODOC&CC=CN&NR=110739319A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200131&DB=EPODOC&CC=CN&NR=110739319A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOM CHANG</creatorcontrib><creatorcontrib>KAO-PIN WU</creatorcontrib><title>DEPTH SENSOR ELEMENT</title><description>The present invention provides a depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on twosides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. Asemiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose forincreasing the reaction rate.
本发明为一种深度感测器元件，其于基板的感光区域中形成有感光栅极，该感光栅极的两相对侧分别间隔形成有一第一及第二传送栅极，又该基板上对应该第一及第二传送栅极的外侧分别间隔形成有一第一及第二浮接掺杂区，基板上形成有半导体区，半导体区上形成有轻掺杂区，感光栅极、第一及第二传送栅极、第一及第二浮接掺杂区下方共用该轻掺杂区，该轻掺杂区的杂质与该半导体区的杂质极性相异，该轻掺杂区的杂质与该第一及第二浮接</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBxcQ0I8VAIdvUL9g9ScPVx9XX1C-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGBubGlsaGlo7GxKgBAHcMHpg</recordid><startdate>20200131</startdate><enddate>20200131</enddate><creator>TOM CHANG</creator><creator>KAO-PIN WU</creator><scope>EVB</scope></search><sort><creationdate>20200131</creationdate><title>DEPTH SENSOR ELEMENT</title><author>TOM CHANG ; KAO-PIN WU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110739319A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TOM CHANG</creatorcontrib><creatorcontrib>KAO-PIN WU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOM CHANG</au><au>KAO-PIN WU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEPTH SENSOR ELEMENT</title><date>2020-01-31</date><risdate>2020</risdate><abstract>The present invention provides a depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on twosides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. Asemiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose forincreasing the reaction rate.
本发明为一种深度感测器元件，其于基板的感光区域中形成有感光栅极，该感光栅极的两相对侧分别间隔形成有一第一及第二传送栅极，又该基板上对应该第一及第二传送栅极的外侧分别间隔形成有一第一及第二浮接掺杂区，基板上形成有半导体区，半导体区上形成有轻掺杂区，感光栅极、第一及第二传送栅极、第一及第二浮接掺杂区下方共用该轻掺杂区，该轻掺杂区的杂质与该半导体区的杂质极性相异，该轻掺杂区的杂质与该第一及第二浮接</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN110739319A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | DEPTH SENSOR ELEMENT |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T11%3A31%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOM%20CHANG&rft.date=2020-01-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN110739319A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |