Method for forming gate stack of 3D memory device

The invention discloses a method for forming the gate stack of a 3D memory device. The method comprises the following steps that: an insulating stack structure is formed on a semiconductor substrate;a step-shaped mask layer is formed on the insulating laminated structure; a step-shaped insulating la...

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Bibliographische Detailangaben

Hauptverfasser:	GUO GUIQI, YU ZIQIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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