Manufacturing method of PERC cell based on laser grooving

The invention discloses a manufacturing method of a PERC cell based on laser grooving, comprising the following steps: texturing; diffusion; etching; front oxidation annealing; back passivation; frontcoating; laser grooving; back oxidation annealing and printing sintering. The back of a silicon wafe...

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Hauptverfasser: YANG JUNYAN, TONG RUI, ZHANG ZHONGWEI, KE XIMAN
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creator YANG JUNYAN
TONG RUI
ZHANG ZHONGWEI
KE XIMAN
description The invention discloses a manufacturing method of a PERC cell based on laser grooving, comprising the following steps: texturing; diffusion; etching; front oxidation annealing; back passivation; frontcoating; laser grooving; back oxidation annealing and printing sintering. The back of a silicon wafer is grooved by laser grooving equipment according to a specific pattern, and the design of the laser grooving area is not limited to a line segment, a line and a point. Through the passivation effect of a silicon dioxide film layer, surface passivation is carried out on the damage layer of the silicon wafer at the laser grooving position to eliminate carrier recombination caused by silicon wafer damage at the laser grooving position. Therefore, the photoelectric conversion efficiency of the cell is improved. 本发明公开了一种PERC电池激光开槽的制作方法,所述方法包括:制绒、扩散、刻蚀、正面氧化退火、背钝化、正面镀膜、激光开槽、背面氧化退火以及印刷烧结,使用激光开槽设备按照特定图形在硅片背面进行开槽,激光开槽区域设计不限于线段式、直线式和点状,通过二氧化硅膜层的钝化作用,从而对激光开槽处硅片损伤层进行表面钝化,消除激光开槽处由于硅片损伤导致的载流子复合,从而提升最终电池电池片的光电转换效率。
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Manufacturing method of PERC cell based on laser grooving
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