MEMORY DEVICE AND PROGRAMMING METHOD

Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a...

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Hauptverfasser: JUNG HYUNSUNG, SONG YOONJONG, LEE JUNG HYUK, SHIN HYEMIN
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creator JUNG HYUNSUNG
SONG YOONJONG
LEE JUNG HYUK
SHIN HYEMIN
description Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drivea source line connected to the target cell with a third driving voltage. 公开了一种存储器设备。该存储器设备包括:包括目标单元的存储单元阵列;驱动字线的行解码器;以及被配置为驱动位线和源极线的写入驱动器与感测放大器。行解码器被配置为在第一编程操作和第二编程操作中驱动字线。在第一编程操作开始和第二编程操作结束之间,写入驱动器与感测放大器被配置为连续地用第二驱动电压驱动连接到目标单元的位线或用第三驱动电压驱动连接到目标单元的源极线。
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110660423A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110660423A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110660423A3</originalsourceid><addsrcrecordid>eNrjZFDxdfX1D4pUcHEN83R2VXD0c1EICPJ3D3L09fX0c1fwdQ3x8HfhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhgZmZgYmRsaOxsSoAQBzmiLZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MEMORY DEVICE AND PROGRAMMING METHOD</title><source>esp@cenet</source><creator>JUNG HYUNSUNG ; SONG YOONJONG ; LEE JUNG HYUK ; SHIN HYEMIN</creator><creatorcontrib>JUNG HYUNSUNG ; SONG YOONJONG ; LEE JUNG HYUK ; SHIN HYEMIN</creatorcontrib><description>Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drivea source line connected to the target cell with a third driving voltage. 公开了一种存储器设备。该存储器设备包括:包括目标单元的存储单元阵列;驱动字线的行解码器;以及被配置为驱动位线和源极线的写入驱动器与感测放大器。行解码器被配置为在第一编程操作和第二编程操作中驱动字线。在第一编程操作开始和第二编程操作结束之间,写入驱动器与感测放大器被配置为连续地用第二驱动电压驱动连接到目标单元的位线或用第三驱动电压驱动连接到目标单元的源极线。</description><language>chi ; eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200107&amp;DB=EPODOC&amp;CC=CN&amp;NR=110660423A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200107&amp;DB=EPODOC&amp;CC=CN&amp;NR=110660423A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUNG HYUNSUNG</creatorcontrib><creatorcontrib>SONG YOONJONG</creatorcontrib><creatorcontrib>LEE JUNG HYUK</creatorcontrib><creatorcontrib>SHIN HYEMIN</creatorcontrib><title>MEMORY DEVICE AND PROGRAMMING METHOD</title><description>Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drivea source line connected to the target cell with a third driving voltage. 公开了一种存储器设备。该存储器设备包括:包括目标单元的存储单元阵列;驱动字线的行解码器;以及被配置为驱动位线和源极线的写入驱动器与感测放大器。行解码器被配置为在第一编程操作和第二编程操作中驱动字线。在第一编程操作开始和第二编程操作结束之间,写入驱动器与感测放大器被配置为连续地用第二驱动电压驱动连接到目标单元的位线或用第三驱动电压驱动连接到目标单元的源极线。</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDxdfX1D4pUcHEN83R2VXD0c1EICPJ3D3L09fX0c1fwdQ3x8HfhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhgZmZgYmRsaOxsSoAQBzmiLZ</recordid><startdate>20200107</startdate><enddate>20200107</enddate><creator>JUNG HYUNSUNG</creator><creator>SONG YOONJONG</creator><creator>LEE JUNG HYUK</creator><creator>SHIN HYEMIN</creator><scope>EVB</scope></search><sort><creationdate>20200107</creationdate><title>MEMORY DEVICE AND PROGRAMMING METHOD</title><author>JUNG HYUNSUNG ; SONG YOONJONG ; LEE JUNG HYUK ; SHIN HYEMIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110660423A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG HYUNSUNG</creatorcontrib><creatorcontrib>SONG YOONJONG</creatorcontrib><creatorcontrib>LEE JUNG HYUK</creatorcontrib><creatorcontrib>SHIN HYEMIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUNG HYUNSUNG</au><au>SONG YOONJONG</au><au>LEE JUNG HYUK</au><au>SHIN HYEMIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORY DEVICE AND PROGRAMMING METHOD</title><date>2020-01-07</date><risdate>2020</risdate><abstract>Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drivea source line connected to the target cell with a third driving voltage. 公开了一种存储器设备。该存储器设备包括:包括目标单元的存储单元阵列;驱动字线的行解码器;以及被配置为驱动位线和源极线的写入驱动器与感测放大器。行解码器被配置为在第一编程操作和第二编程操作中驱动字线。在第一编程操作开始和第二编程操作结束之间,写入驱动器与感测放大器被配置为连续地用第二驱动电压驱动连接到目标单元的位线或用第三驱动电压驱动连接到目标单元的源极线。</abstract><oa>free_for_read</oa></addata></record>
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title MEMORY DEVICE AND PROGRAMMING METHOD
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