VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM
A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a seco...
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| creator | SAUER ANDREAS ZANG SEBASTIAN GUNTHER HENRICH JURGEN |
| description | A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15 degrees or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110612362A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110612362A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110612362A3</originalsourceid><addsrcrecordid>eNrjZPAOc3QODfVVCAjyd3YNDvb0c1cIjgwOcfVVcPRzUfB1DfHwd1Hwd1PwD3ANcgwBSTsq4NLCw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwsSk1PzUkvinf0MDQ3MDI2MzYwcjYlRAwCqZy3X</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM</title><source>esp@cenet</source><creator>SAUER ANDREAS ; ZANG SEBASTIAN GUNTHER ; HENRICH JURGEN</creator><creatorcontrib>SAUER ANDREAS ; ZANG SEBASTIAN GUNTHER ; HENRICH JURGEN</creatorcontrib><description>A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15 degrees or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191224&DB=EPODOC&CC=CN&NR=110612362A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191224&DB=EPODOC&CC=CN&NR=110612362A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAUER ANDREAS</creatorcontrib><creatorcontrib>ZANG SEBASTIAN GUNTHER</creatorcontrib><creatorcontrib>HENRICH JURGEN</creatorcontrib><title>VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM</title><description>A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15 degrees or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAOc3QODfVVCAjyd3YNDvb0c1cIjgwOcfVVcPRzUfB1DfHwd1Hwd1PwD3ANcgwBSTsq4NLCw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwsSk1PzUkvinf0MDQ3MDI2MzYwcjYlRAwCqZy3X</recordid><startdate>20191224</startdate><enddate>20191224</enddate><creator>SAUER ANDREAS</creator><creator>ZANG SEBASTIAN GUNTHER</creator><creator>HENRICH JURGEN</creator><scope>EVB</scope></search><sort><creationdate>20191224</creationdate><title>VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM</title><author>SAUER ANDREAS ; ZANG SEBASTIAN GUNTHER ; HENRICH JURGEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110612362A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SAUER ANDREAS</creatorcontrib><creatorcontrib>ZANG SEBASTIAN GUNTHER</creatorcontrib><creatorcontrib>HENRICH JURGEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAUER ANDREAS</au><au>ZANG SEBASTIAN GUNTHER</au><au>HENRICH JURGEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM</title><date>2019-12-24</date><risdate>2019</risdate><abstract>A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15 degrees or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN110612362A |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM PROCESSING SYSTEM |
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