Method for manufacturing semiconductor device

The invention discloses a method for manufacturing a semiconductor device, which includes forming a first oxide layer on a high-voltage region and a low-voltage region; performing an atomic layer deposition manufacturing process to form a second oxide layer on the first oxide layer, wherein the powe...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CAI ZONGXUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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