Photoresist removal method and photoresist reproduction method
The invention relates to a photoresist removal method and a photoresist reproduction method, and relates to a manufacturing technology of a semiconductor integrated circuit. During the photoresist removal process, firstly a photoresist layer is subjected to the first time of plasma etching by using...
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| creator | LIU LIYAO XIE MINQIAN HU ZHANYUAN QIU JINGYAO |
| description | The invention relates to a photoresist removal method and a photoresist reproduction method, and relates to a manufacturing technology of a semiconductor integrated circuit. During the photoresist removal process, firstly a photoresist layer is subjected to the first time of plasma etching by using an oxygen-containing gas, a certain height of photoresist on the surface of the wafer is removed anda certain height of photoresist is retained on the surface of the wafer, and then the remaining photoresist layer is subjected to the second time of plasma etching by using a hydrogen-containing gasand the remaining photoresist layer is completely removed. Therefore, the advantages of the plasma etching process for the photoresist layer by using the oxygen-containing gas and the plasma etching process for the photoresist layer by using hydrogen-containing gas can be realized, defect generation can be avoided and the yield rate of semiconductor devices can be improved.
本发明涉及光刻胶去除方法及光刻胶重制方法，涉及半导体集成电路的制造技术，在光刻胶去除过程中，首先使 |
| format | Patent |
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本发明涉及光刻胶去除方法及光刻胶重制方法，涉及半导体集成电路的制造技术，在光刻胶去除过程中，首先使</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191217&DB=EPODOC&CC=CN&NR=110581065A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191217&DB=EPODOC&CC=CN&NR=110581065A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU LIYAO</creatorcontrib><creatorcontrib>XIE MINQIAN</creatorcontrib><creatorcontrib>HU ZHANYUAN</creatorcontrib><creatorcontrib>QIU JINGYAO</creatorcontrib><title>Photoresist removal method and photoresist reproduction method</title><description>The invention relates to a photoresist removal method and a photoresist reproduction method, and relates to a manufacturing technology of a semiconductor integrated circuit. During the photoresist removal process, firstly a photoresist layer is subjected to the first time of plasma etching by using an oxygen-containing gas, a certain height of photoresist on the surface of the wafer is removed anda certain height of photoresist is retained on the surface of the wafer, and then the remaining photoresist layer is subjected to the second time of plasma etching by using a hydrogen-containing gasand the remaining photoresist layer is completely removed. Therefore, the advantages of the plasma etching process for the photoresist layer by using the oxygen-containing gas and the plasma etching process for the photoresist layer by using hydrogen-containing gas can be realized, defect generation can be avoided and the yield rate of semiconductor devices can be improved.
本发明涉及光刻胶去除方法及光刻胶重制方法，涉及半导体集成电路的制造技术，在光刻胶去除过程中，首先使</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALyMgvyS9KLc4sLlEoSs3NL0vMUchNLcnIT1FIzEtRKECRLijKTylNLsnMz4Oq4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYGphaGBmamjsbEqAEA1BIxjA</recordid><startdate>20191217</startdate><enddate>20191217</enddate><creator>LIU LIYAO</creator><creator>XIE MINQIAN</creator><creator>HU ZHANYUAN</creator><creator>QIU JINGYAO</creator><scope>EVB</scope></search><sort><creationdate>20191217</creationdate><title>Photoresist removal method and photoresist reproduction method</title><author>LIU LIYAO ; XIE MINQIAN ; HU ZHANYUAN ; QIU JINGYAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110581065A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU LIYAO</creatorcontrib><creatorcontrib>XIE MINQIAN</creatorcontrib><creatorcontrib>HU ZHANYUAN</creatorcontrib><creatorcontrib>QIU JINGYAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU LIYAO</au><au>XIE MINQIAN</au><au>HU ZHANYUAN</au><au>QIU JINGYAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photoresist removal method and photoresist reproduction method</title><date>2019-12-17</date><risdate>2019</risdate><abstract>The invention relates to a photoresist removal method and a photoresist reproduction method, and relates to a manufacturing technology of a semiconductor integrated circuit. During the photoresist removal process, firstly a photoresist layer is subjected to the first time of plasma etching by using an oxygen-containing gas, a certain height of photoresist on the surface of the wafer is removed anda certain height of photoresist is retained on the surface of the wafer, and then the remaining photoresist layer is subjected to the second time of plasma etching by using a hydrogen-containing gasand the remaining photoresist layer is completely removed. Therefore, the advantages of the plasma etching process for the photoresist layer by using the oxygen-containing gas and the plasma etching process for the photoresist layer by using hydrogen-containing gas can be realized, defect generation can be avoided and the yield rate of semiconductor devices can be improved.
本发明涉及光刻胶去除方法及光刻胶重制方法，涉及半导体集成电路的制造技术，在光刻胶去除过程中，首先使</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Photoresist removal method and photoresist reproduction method |
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