Forming method of semiconductor structure

The invention discloses a forming method of a semiconductor structure. The method comprises the following steps: forming a laminated structure on a semiconductor substrate; forming a patterned mask layer on the laminated structure; forming a contact hole and a groove in the laminated structure; and forming a second conductive channel and a third conductive channel in the contact hole and the groove, wherein the patterned mask layer comprises a contact hole pattern and a groove pattern corresponding to the first conductive channel, and the heights of the contact hole pattern and the groove pattern are set by the material and height of the first dielectric layer and the second dielectric layer. According to the method provided by the invention, a patterned mask layer is formed by adopting agray-scale photoetching method, a nanoimprint method, a gray-scale mask plate photoetching method or an ion beam gas-assisted deposition method, a semiconductor structure is etched by using dry etching, and patterns of the ma