SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

Provided is a semiconductor device manufacturing method suitable for forming a single-step tapered groove even in the case of difficult-to-etch substrate material. The semiconductor device manufacturing method is provided with: a metal mask forming step; a dry etching step; and a metal mask removing step. The metal mask forming step forms a tapered metal mask having an opening, on a back surface of a substrate. The opening exposes a part of the back surface, wherein the opening has an edge portion which is forwardly tapered toward the back surface. The dry etching step forms a tapered groove in the substrate by dry etching, from above the tapered metal mask, the edge portion of the opening and the substrate exposed via the opening. The metal mask removing step removes the tapered metal mask. 本发明提供即使基板材料为难蚀刻材料，也适于形成单段锥形槽的半导体装置的制造方法。半导体装置的制造方法具备金属掩模形成工序、干蚀刻工序、金属掩膜去除工序。金属掩模形成工序是在基板的背面形成具备开口的锥形金属掩模。所述开口使所述背面的一部分露出，且所述开口的缘部朝向所述背面具有正锥形。干蚀刻工序是通过从所述锥形金属掩模之上对所述开口的所述缘部及从所述开口露出的所述基板进行干蚀刻，从而在所述基板形成锥形槽。金属掩膜去除工序是将所述锥形金属掩模去