ETCHING COMPOSITION FOR SILICONE NITRIDE AND METHOD FOR ETCHING USING SAME
The invention provides an etching composition for silicon nitride and a method of etching using the same. The etching composition includes: a phosphoric acid compound; a substituted or unsubstituted C7 to C8 cyclic hydrocarbon; and water. The etching composition has high selectivity to a silicon nit...
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Format: | Patent |
Sprache: | chi ; eng |
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