ETCHING COMPOSITION FOR SILICONE NITRIDE AND METHOD FOR ETCHING USING SAME

ETCHING COMPOSITION FOR SILICONE NITRIDE AND METHOD FOR ETCHING USING SAME

The invention provides an etching composition for silicon nitride and a method of etching using the same. The etching composition includes: a phosphoric acid compound; a substituted or unsubstituted C7 to C8 cyclic hydrocarbon; and water. The etching composition has high selectivity to a silicon nit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOH SANG RAN, CHOI JUNG MIN, CHO YOUN JIN, HWANG KI WOOK
Format: Patent
Sprache:chi ; eng
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
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Beschreibung
Zusammenfassung:The invention provides an etching composition for silicon nitride and a method of etching using the same. The etching composition includes: a phosphoric acid compound; a substituted or unsubstituted C7 to C8 cyclic hydrocarbon; and water. The etching composition has high selectivity to a silicon nitride layer, and can suppress precipitation of a silicon compound. 一种用于氮化硅的蚀刻组合物和使用其进行蚀刻的方法。蚀刻组合物包括：磷酸化合物；取代或未取代的C至C环烃；和水。该蚀刻组合物对氮化硅层具有高选择性，并且可以抑制硅化合物的沉淀。