Three-dimensional semiconductor memory device

A three-dimensional semiconductor memory device includes a horizontal semiconductor layer provided on a lower insulating layer. The horizontal semiconductor layer includes a cell array region and a connection region. An electrode structure is provided including electrodes. The electrodes are stacked on the horizontal semiconductor layer. The electrodes have a staircase structure on the connectionregion. A plurality of first vertical structures are provided on the cell array region to penetrate the electrode structure. A plurality of second vertical structures are provided on the connection region to penetrate the electrode structure and the horizontal semiconductor layer. Bottom surfaces of the second vertical structures are positioned at a level lower than a bottom surface of the horizontal semiconductor layer. 本发明提供了一种三维半导体存储器件，包括设置在下绝缘层上的水平半导体层。所述水平半导体层包括单元阵列区域和连接区域。设置有包括电极的电极结构。所述电极堆叠在所述水平半导体层上。所述电极在所述连接区域上具有阶梯结构。多个第一垂直结构设置在所述单元阵列区域上以穿透所述电极结构。多个第二垂直结构设置在所述连接区域上以穿透所述电极结构和所述水平半导体层。所述第二垂直结构的底表面位于低于所述水平半导体层的底