High-bandwidth CMOS APD photoelectric device working in visible light waveband

High-bandwidth CMOS APD photoelectric device working in visible light waveband

The invention relates to a high-bandwidth CMOS APD photoelectric device working in a visible light waveband. The high-bandwidth CMOS APD photoelectric device comprises a P substrate, and two deep N wells stacked on the P substrate, two P well layers are stacked on the deep N wells, one N+ layer and...

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Hauptverfasser: WANG WEI, WANG GUANYU, MAO DINGCHANG, ZENG HONG'AN, ZHAO YUANYAO
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WANG WEI
WANG GUANYU
MAO DINGCHANG
ZENG HONG'AN
ZHAO YUANYAO
description The invention relates to a high-bandwidth CMOS APD photoelectric device working in a visible light waveband. The high-bandwidth CMOS APD photoelectric device comprises a P substrate, and two deep N wells stacked on the P substrate, two P well layers are stacked on the deep N wells, one N+ layer and one P+ layer are stacked on each P well layer, a PN junction is formed by the heavily doped N+ layers and the lightly doped P well layers, namely an avalanche region is formed, the avalanche region comprises a first avalanche region and a second avalanche region, and is provided with two illumination windows, when a light source is emitted into the device and is absorbed by a light absorption region, a photon-generated carrier is generated, and the photon-generated carrier moves to the first avalanche region and the second avalanche region under the action of an electric field to participate in multiplication; and STI guard rings are added at two ends of the gap of the P well layers. The design technology is design
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High-bandwidth CMOS APD photoelectric device working in visible light waveband
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