Photoelectric sensor based on copper-doped cadmium sulfide nanowires and preparation method of photoelectric sensor

The invention discloses a photoelectric sensor based on copper-doped cadmium sulfide nanowires and a preparation method of the photoelectric sensor. The preparation method comprises the following steps: cleaning a substrate material, blow-drying with nitrogen, placing a mask, and depositing a Ti film and an Au film in sequence in a vacuum cavity by using an electron beam evaporation method; usinga UV laser marking machine to ablate and carve a groove in the Au/Ti film along a set square-wave-shaped route, and constructing an interdigital electrode; putting a substrate into gas-phase growth equipment, preparing Cu-doped CdS nanowires by using Au as a catalyst through a high-temperature gas-phase growth method, wherein according to the filling amount of a doped raw material, the percentageof Cu atoms doped into CdS is enabled to be 0-7 percent; and overlapping and bridging the nanowires one another at the top of the groove to form a photoelectric sensor unit; according to the present invention, the photoelectri