Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof
The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated deri...
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creator | GE LINGBING WANG WENXIANG MIAO FANG ZHENG YONGHAO |
description | The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN110041337A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN110041337A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN110041337A3</originalsourceid><addsrcrecordid>eNqNi7EKwlAMRbs4iPoPcVdoqeAsRXESB_cSXtM28PoS0jj49z6KH-BwOXA4d13Y82MmUXQBgdiAiQPMNHGQ1L2Di8GETsYYIStHTpwG6I0IDDsOGOcDqJGiobMkmMhH6QBTnmrMxaJ9JCPpt8Wqzxfa_bgp9rfrq7kfSaWlWTFQIm-bR1WV5amq6_Ol_qf5Atw_RWs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof</title><source>esp@cenet</source><creator>GE LINGBING ; WANG WENXIANG ; MIAO FANG ; ZHENG YONGHAO</creator><creatorcontrib>GE LINGBING ; WANG WENXIANG ; MIAO FANG ; ZHENG YONGHAO</creatorcontrib><description>The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; HETEROCYCLIC COMPOUNDS ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190723&DB=EPODOC&CC=CN&NR=110041337A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76304</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190723&DB=EPODOC&CC=CN&NR=110041337A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GE LINGBING</creatorcontrib><creatorcontrib>WANG WENXIANG</creatorcontrib><creatorcontrib>MIAO FANG</creatorcontrib><creatorcontrib>ZHENG YONGHAO</creatorcontrib><title>Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof</title><description>The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>HETEROCYCLIC COMPOUNDS</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwlAMRbs4iPoPcVdoqeAsRXESB_cSXtM28PoS0jj49z6KH-BwOXA4d13Y82MmUXQBgdiAiQPMNHGQ1L2Di8GETsYYIStHTpwG6I0IDDsOGOcDqJGiobMkmMhH6QBTnmrMxaJ9JCPpt8Wqzxfa_bgp9rfrq7kfSaWlWTFQIm-bR1WV5amq6_Ol_qf5Atw_RWs</recordid><startdate>20190723</startdate><enddate>20190723</enddate><creator>GE LINGBING</creator><creator>WANG WENXIANG</creator><creator>MIAO FANG</creator><creator>ZHENG YONGHAO</creator><scope>EVB</scope></search><sort><creationdate>20190723</creationdate><title>Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof</title><author>GE LINGBING ; WANG WENXIANG ; MIAO FANG ; ZHENG YONGHAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110041337A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>HETEROCYCLIC COMPOUNDS</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GE LINGBING</creatorcontrib><creatorcontrib>WANG WENXIANG</creatorcontrib><creatorcontrib>MIAO FANG</creatorcontrib><creatorcontrib>ZHENG YONGHAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GE LINGBING</au><au>WANG WENXIANG</au><au>MIAO FANG</au><au>ZHENG YONGHAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof</title><date>2019-07-23</date><risdate>2019</risdate><abstract>The invention discloses a pyrrolopyrrole organic semiconductor material containing free radicals, a preparation method and application thereof and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing a pyrrolopyrrole halogenated derivative with a monomer I, or mixing a pyrrolopyrrole organic tin compound and a monomer I' to obtaina pyrrolopyrrole organic semiconductor material; enabling the pyrrolopyrrole organic semiconductor material to react with an oxidant to obtain the pyrrolopyrrole organic semiconductor material containing the free radicals. The preparation method disclosed by the invention is simple in synthesis routine and easy in synthesis. The pyrrolopyrrole organic semiconductor material containing the free radicals prepared by the invention has the advantages that the electron mobility is high, the molecular stability is good, the absorption intensity is high, the absorption waveband is narrow, the absorption wavelength reaches a</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HETEROCYCLIC COMPOUNDS METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES |
title | Pyrrolopyrrole organic semiconductor material containing free radicals, preparation method and application thereof |
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