Method for detecting focus variation between wafer center and wafer edge and compensation method thereof
The invention relates to a method for detecting a focus variation between a wafer center and a wafer edge and relates to the integrated circuit manufacturing technology. The method comprises the stepsof (S1) providing a wafer with a plurality of cutting ways, (S2) designing a plurality of pattern an...
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| creator | HUANG YONGFA YANG SHANGYONG |
| description | The invention relates to a method for detecting a focus variation between a wafer center and a wafer edge and relates to the integrated circuit manufacturing technology. The method comprises the stepsof (S1) providing a wafer with a plurality of cutting ways, (S2) designing a plurality of pattern and placing the plurality of the patterns on cutting ways on a wafer center area and cutting ways ona wafer edge area, and (S3) performing lithographic exposure on the wafer provided in step (S2), and (S4) measuring the change amount of the size of the patterns on the cutting ways on the wafer edgearea relative to the size of the patterns on the cutting ways on the wafer center area after exposure to obtain the focus variation between the wafer center and the wafer edge so as to detect the focus variation between the wafer center and the wafer edge in advance in the early stage of development.
本发明涉及侦测晶圆中心与边缘之间聚焦变化量的方法，涉及集成电路制造技术，包括：S1：提供一晶圆，晶圆上包括多个切割道；S2：设计多个图形，将多个所述图形分别放置在位于晶圆中心区域的切割道上及位于晶圆边缘区域的切割道上；S3：对步骤S2提供的晶圆进行光 |
| format | Patent |
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本发明涉及侦测晶圆中心与边缘之间聚焦变化量的方法，涉及集成电路制造技术，包括：S1：提供一晶圆，晶圆上包括多个切割道；S2：设计多个图形，将多个所述图形分别放置在位于晶圆中心区域的切割道上及位于晶圆边缘区域的切割道上；S3：对步骤S2提供的晶圆进行光</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190712&DB=EPODOC&CC=CN&NR=110007566A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190712&DB=EPODOC&CC=CN&NR=110007566A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG YONGFA</creatorcontrib><creatorcontrib>YANG SHANGYONG</creatorcontrib><title>Method for detecting focus variation between wafer center and wafer edge and compensation method thereof</title><description>The invention relates to a method for detecting a focus variation between a wafer center and a wafer edge and relates to the integrated circuit manufacturing technology. The method comprises the stepsof (S1) providing a wafer with a plurality of cutting ways, (S2) designing a plurality of pattern and placing the plurality of the patterns on cutting ways on a wafer center area and cutting ways ona wafer edge area, and (S3) performing lithographic exposure on the wafer provided in step (S2), and (S4) measuring the change amount of the size of the patterns on the cutting ways on the wafer edgearea relative to the size of the patterns on the cutting ways on the wafer center area after exposure to obtain the focus variation between the wafer center and the wafer edge so as to detect the focus variation between the wafer center and the wafer edge in advance in the early stage of development.
本发明涉及侦测晶圆中心与边缘之间聚焦变化量的方法，涉及集成电路制造技术，包括：S1：提供一晶圆，晶圆上包括多个切割道；S2：设计多个图形，将多个所述图形分别放置在位于晶圆中心区域的切割道上及位于晶圆边缘区域的切割道上；S3：对步骤S2提供的晶圆进行光</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAURLtxIeodvgcQUsS6lqK40ZX7EpNJE7BJSL72-gbbA7ga3jDzlpW9gW3QZEIiDYZi5_tC6p3pI5OT7IKnJ3gEPI3SIJGC5xLS67mA7vFDFYYIn6fTMJnZIiGYdbUw8pWxmXNVbS_nR3vdIYYOOcpiBXftva6FEMdD05z2_2y-B1ZAXQ</recordid><startdate>20190712</startdate><enddate>20190712</enddate><creator>HUANG YONGFA</creator><creator>YANG SHANGYONG</creator><scope>EVB</scope></search><sort><creationdate>20190712</creationdate><title>Method for detecting focus variation between wafer center and wafer edge and compensation method thereof</title><author>HUANG YONGFA ; YANG SHANGYONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110007566A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG YONGFA</creatorcontrib><creatorcontrib>YANG SHANGYONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG YONGFA</au><au>YANG SHANGYONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for detecting focus variation between wafer center and wafer edge and compensation method thereof</title><date>2019-07-12</date><risdate>2019</risdate><abstract>The invention relates to a method for detecting a focus variation between a wafer center and a wafer edge and relates to the integrated circuit manufacturing technology. The method comprises the stepsof (S1) providing a wafer with a plurality of cutting ways, (S2) designing a plurality of pattern and placing the plurality of the patterns on cutting ways on a wafer center area and cutting ways ona wafer edge area, and (S3) performing lithographic exposure on the wafer provided in step (S2), and (S4) measuring the change amount of the size of the patterns on the cutting ways on the wafer edgearea relative to the size of the patterns on the cutting ways on the wafer center area after exposure to obtain the focus variation between the wafer center and the wafer edge so as to detect the focus variation between the wafer center and the wafer edge in advance in the early stage of development.
本发明涉及侦测晶圆中心与边缘之间聚焦变化量的方法，涉及集成电路制造技术，包括：S1：提供一晶圆，晶圆上包括多个切割道；S2：设计多个图形，将多个所述图形分别放置在位于晶圆中心区域的切割道上及位于晶圆边缘区域的切割道上；S3：对步骤S2提供的晶圆进行光</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Method for detecting focus variation between wafer center and wafer edge and compensation method thereof |
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