SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of singlecrystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of...
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creator | OLSSON ROBBIE STEFAN IAN MOLLART TIMOTHY PETER GREEN BEN LLEWELYN BENNETT ANDREW MICHAEL |
description | A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of singlecrystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality ofsingle crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
一种制造多个单晶CVD金刚石的方法。该方法包括在第一载体基底上安装多个单晶金刚石基底。使所述多个单晶金刚石基底进行第一CVD金刚石生长过程,以便在多个单晶金刚石基底上形成多个单晶CVD金刚石。将所述多个单晶CVD金刚石安装在凹陷的载体基底中并进行第二CVD金刚石生长过程。 |
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一种制造多个单晶CVD金刚石的方法。该方法包括在第一载体基底上安装多个单晶金刚石基底。使所述多个单晶金刚石基底进行第一CVD金刚石生长过程,以便在多个单晶金刚石基底上形成多个单晶CVD金刚石。将所述多个单晶CVD金刚石安装在凹陷的载体基底中并进行第二CVD金刚石生长过程。</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190621&DB=EPODOC&CC=CN&NR=109923247A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190621&DB=EPODOC&CC=CN&NR=109923247A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OLSSON ROBBIE STEFAN IAN</creatorcontrib><creatorcontrib>MOLLART TIMOTHY PETER</creatorcontrib><creatorcontrib>GREEN BEN LLEWELYN</creatorcontrib><creatorcontrib>BENNETT ANDREW MICHAEL</creatorcontrib><title>SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><description>A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of singlecrystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality ofsingle crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
一种制造多个单晶CVD金刚石的方法。该方法包括在第一载体基底上安装多个单晶金刚石基底。使所述多个单晶金刚石基底进行第一CVD金刚石生长过程,以便在多个单晶金刚石基底上形成多个单晶CVD金刚石。将所述多个单晶CVD金刚石安装在凹陷的载体基底中并进行第二CVD金刚石生长过程。</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgMjvQL8XAN9gxW8HdTCPHwdPZWCPb0c_dxVXAOigwOcfRRcPF09PX3c1HwdQxxDfIECoR5Oio4e7j6ejqDOI4B_qFBCi6uAf7BniGe_n48DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSTe2c_QwNLSyNjIxNzRmBg1AK-7L3Q</recordid><startdate>20190621</startdate><enddate>20190621</enddate><creator>OLSSON ROBBIE STEFAN IAN</creator><creator>MOLLART TIMOTHY PETER</creator><creator>GREEN BEN LLEWELYN</creator><creator>BENNETT ANDREW MICHAEL</creator><scope>EVB</scope></search><sort><creationdate>20190621</creationdate><title>SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><author>OLSSON ROBBIE STEFAN IAN ; MOLLART TIMOTHY PETER ; GREEN BEN LLEWELYN ; BENNETT ANDREW MICHAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109923247A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>OLSSON ROBBIE STEFAN IAN</creatorcontrib><creatorcontrib>MOLLART TIMOTHY PETER</creatorcontrib><creatorcontrib>GREEN BEN LLEWELYN</creatorcontrib><creatorcontrib>BENNETT ANDREW MICHAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OLSSON ROBBIE STEFAN IAN</au><au>MOLLART TIMOTHY PETER</au><au>GREEN BEN LLEWELYN</au><au>BENNETT ANDREW MICHAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION</title><date>2019-06-21</date><risdate>2019</risdate><abstract>A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of singlecrystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality ofsingle crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
一种制造多个单晶CVD金刚石的方法。该方法包括在第一载体基底上安装多个单晶金刚石基底。使所述多个单晶金刚石基底进行第一CVD金刚石生长过程,以便在多个单晶金刚石基底上形成多个单晶CVD金刚石。将所述多个单晶CVD金刚石安装在凹陷的载体基底中并进行第二CVD金刚石生长过程。</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | SYNTHESIS OF THICK SINGLE CRYSTAL DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION |
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