Equivalent circuit of CMOS SPAD photoelectric device
The invention requests to protect an equivalent circuit of a CMOS SPAD device, which mainly includes P+ / center N well junction impedance, P+ / N well junction impedance on both sides inside the device, center N well/P substrate junction impedance, pad impedance and so on. The current source is add...
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| creator | WANG WEI WANG GUANYU ZENG HONG'AN WANG GUANG ZHOU KAILI WANG YICHANG |
| description | The invention requests to protect an equivalent circuit of a CMOS SPAD device, which mainly includes P+ / center N well junction impedance, P+ / N well junction impedance on both sides inside the device, center N well/P substrate junction impedance, pad impedance and so on. The current source is added into the equivalent circuit to simulate the motion of photogenerated carriers inside the device.The P+ / center N well junction impedance can be divided into multiplication region impedance and drift region impedance, Ra, La, Rl represent multiplication region impedance, Rd and Rs represent drift region impedance. Because there is a 90 degree phase delay of the AC conduction current in the multiplication region relative to the AC voltage, an inductor La component exists in the multiplicationregion; a capacitor C represents the junction capacitor of P+ / center N well. The P+ / N well junction impedance on both sides inside the device is replaced by a capacitor C p+/n-well and a resistorR p+/n-well in series. In |
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The current source is added into the equivalent circuit to simulate the motion of photogenerated carriers inside the device.The P+ / center N well junction impedance can be divided into multiplication region impedance and drift region impedance, Ra, La, Rl represent multiplication region impedance, Rd and Rs represent drift region impedance. Because there is a 90 degree phase delay of the AC conduction current in the multiplication region relative to the AC voltage, an inductor La component exists in the multiplicationregion; a capacitor C represents the junction capacitor of P+ / center N well. The P+ / N well junction impedance on both sides inside the device is replaced by a capacitor C p+/n-well and a resistorR p+/n-well in series. 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The current source is added into the equivalent circuit to simulate the motion of photogenerated carriers inside the device.The P+ / center N well junction impedance can be divided into multiplication region impedance and drift region impedance, Ra, La, Rl represent multiplication region impedance, Rd and Rs represent drift region impedance. Because there is a 90 degree phase delay of the AC conduction current in the multiplication region relative to the AC voltage, an inductor La component exists in the multiplicationregion; a capacitor C represents the junction capacitor of P+ / center N well. The P+ / N well junction impedance on both sides inside the device is replaced by a capacitor C p+/n-well and a resistorR p+/n-well in series. 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The current source is added into the equivalent circuit to simulate the motion of photogenerated carriers inside the device.The P+ / center N well junction impedance can be divided into multiplication region impedance and drift region impedance, Ra, La, Rl represent multiplication region impedance, Rd and Rs represent drift region impedance. Because there is a 90 degree phase delay of the AC conduction current in the multiplication region relative to the AC voltage, an inductor La component exists in the multiplicationregion; a capacitor C represents the junction capacitor of P+ / center N well. The P+ / N well junction impedance on both sides inside the device is replaced by a capacitor C p+/n-well and a resistorR p+/n-well in series. In</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Equivalent circuit of CMOS SPAD photoelectric device |
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