Method for depositing metals free ALD silicon nitride films using halide-based precursors
A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through ga...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHANDRASEKHARAN RAMESH MCKERROW ANDREW JOHN KELCHNER KATHRYN MERCED HENRI JON SIMS JAMES S VARADARAJAN SESHASAYEE |
| description | A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
一种在等离子体增强原子层沉积(PEALD)反应室的微体积中处理的半导体衬底上沉积氮化硅膜的方法，其中单个半导体衬底被支撑在基座的陶瓷表面上并且将工艺 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN109891550A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN109891550A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN109891550A3</originalsourceid><addsrcrecordid>eNqNjUEKwjAQRbNxIeodxgMUWqRgl6UqLtSVG1clNpN2IE3CTHp_I3gAVw8-j__W6nXHNAUDNjAYjEEokR9hxqSdgGVEaG8nEHI0BA-eEpNBsORmgUW-7qRdnoq3FjQQGYeFJbBs1crmD9z9uFH7y_nZXYtc6VGiHtBj6rtHVTbHpqrrsj3843wAwBI6jw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for depositing metals free ALD silicon nitride films using halide-based precursors</title><source>esp@cenet</source><creator>CHANDRASEKHARAN RAMESH ; MCKERROW ANDREW JOHN ; KELCHNER KATHRYN MERCED ; HENRI JON ; SIMS JAMES S ; VARADARAJAN SESHASAYEE</creator><creatorcontrib>CHANDRASEKHARAN RAMESH ; MCKERROW ANDREW JOHN ; KELCHNER KATHRYN MERCED ; HENRI JON ; SIMS JAMES S ; VARADARAJAN SESHASAYEE</creatorcontrib><description>A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
一种在等离子体增强原子层沉积(PEALD)反应室的微体积中处理的半导体衬底上沉积氮化硅膜的方法，其中单个半导体衬底被支撑在基座的陶瓷表面上并且将工艺</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190614&DB=EPODOC&CC=CN&NR=109891550A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190614&DB=EPODOC&CC=CN&NR=109891550A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHANDRASEKHARAN RAMESH</creatorcontrib><creatorcontrib>MCKERROW ANDREW JOHN</creatorcontrib><creatorcontrib>KELCHNER KATHRYN MERCED</creatorcontrib><creatorcontrib>HENRI JON</creatorcontrib><creatorcontrib>SIMS JAMES S</creatorcontrib><creatorcontrib>VARADARAJAN SESHASAYEE</creatorcontrib><title>Method for depositing metals free ALD silicon nitride films using halide-based precursors</title><description>A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
一种在等离子体增强原子层沉积(PEALD)反应室的微体积中处理的半导体衬底上沉积氮化硅膜的方法，其中单个半导体衬底被支撑在基座的陶瓷表面上并且将工艺</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjUEKwjAQRbNxIeodxgMUWqRgl6UqLtSVG1clNpN2IE3CTHp_I3gAVw8-j__W6nXHNAUDNjAYjEEokR9hxqSdgGVEaG8nEHI0BA-eEpNBsORmgUW-7qRdnoq3FjQQGYeFJbBs1crmD9z9uFH7y_nZXYtc6VGiHtBj6rtHVTbHpqrrsj3843wAwBI6jw</recordid><startdate>20190614</startdate><enddate>20190614</enddate><creator>CHANDRASEKHARAN RAMESH</creator><creator>MCKERROW ANDREW JOHN</creator><creator>KELCHNER KATHRYN MERCED</creator><creator>HENRI JON</creator><creator>SIMS JAMES S</creator><creator>VARADARAJAN SESHASAYEE</creator><scope>EVB</scope></search><sort><creationdate>20190614</creationdate><title>Method for depositing metals free ALD silicon nitride films using halide-based precursors</title><author>CHANDRASEKHARAN RAMESH ; MCKERROW ANDREW JOHN ; KELCHNER KATHRYN MERCED ; HENRI JON ; SIMS JAMES S ; VARADARAJAN SESHASAYEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109891550A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHANDRASEKHARAN RAMESH</creatorcontrib><creatorcontrib>MCKERROW ANDREW JOHN</creatorcontrib><creatorcontrib>KELCHNER KATHRYN MERCED</creatorcontrib><creatorcontrib>HENRI JON</creatorcontrib><creatorcontrib>SIMS JAMES S</creatorcontrib><creatorcontrib>VARADARAJAN SESHASAYEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHANDRASEKHARAN RAMESH</au><au>MCKERROW ANDREW JOHN</au><au>KELCHNER KATHRYN MERCED</au><au>HENRI JON</au><au>SIMS JAMES S</au><au>VARADARAJAN SESHASAYEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for depositing metals free ALD silicon nitride films using halide-based precursors</title><date>2019-06-14</date><risdate>2019</risdate><abstract>A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
一种在等离子体增强原子层沉积(PEALD)反应室的微体积中处理的半导体衬底上沉积氮化硅膜的方法，其中单个半导体衬底被支撑在基座的陶瓷表面上并且将工艺</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN109891550A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for depositing metals free ALD silicon nitride films using halide-based precursors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T08%3A58%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHANDRASEKHARAN%20RAMESH&rft.date=2019-06-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN109891550A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |