A recovery method and device for threshold voltage of a memory
The invention discloses a recovery method and device for threshold voltage of a memory. The method comprises the steps that at least one set of memory cells included in a memory are subjected to readrecovery operation in sequence, first voltage is applied to grid electrodes of the memory cells, seco...
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| creator | ZHANG SAI HU HONG CHEN JIANGZHONG ZHANG JIANJUN |
| description | The invention discloses a recovery method and device for threshold voltage of a memory. The method comprises the steps that at least one set of memory cells included in a memory are subjected to readrecovery operation in sequence, first voltage is applied to grid electrodes of the memory cells, second voltage is applied to grid electrodes of reference memory cells, drain electrodes of the reference memory cells are connected with a first end of a reference current source, and a second end of the reference current source is grounded; recovery verification operation is performed on the memory cell in the programming state in the recovery read operation, a first voltage is applied to the grid electrode of the memory cell in the programming state, and a first voltage is applied to the grid electrode of the reference memory cell; And programming operation is performed on the memory cell in the erased state in the recovery verification operation. According to the technical scheme provided by the embodiment of the i |
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The method comprises the steps that at least one set of memory cells included in a memory are subjected to readrecovery operation in sequence, first voltage is applied to grid electrodes of the memory cells, second voltage is applied to grid electrodes of reference memory cells, drain electrodes of the reference memory cells are connected with a first end of a reference current source, and a second end of the reference current source is grounded; recovery verification operation is performed on the memory cell in the programming state in the recovery read operation, a first voltage is applied to the grid electrode of the memory cell in the programming state, and a first voltage is applied to the grid electrode of the reference memory cell; And programming operation is performed on the memory cell in the erased state in the recovery verification operation. 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The method comprises the steps that at least one set of memory cells included in a memory are subjected to readrecovery operation in sequence, first voltage is applied to grid electrodes of the memory cells, second voltage is applied to grid electrodes of reference memory cells, drain electrodes of the reference memory cells are connected with a first end of a reference current source, and a second end of the reference current source is grounded; recovery verification operation is performed on the memory cell in the programming state in the recovery read operation, a first voltage is applied to the grid electrode of the memory cell in the programming state, and a first voltage is applied to the grid electrode of the reference memory cell; And programming operation is performed on the memory cell in the erased state in the recovery verification operation. According to the technical scheme provided by the embodiment of the i</abstract><oa>free_for_read</oa></addata></record> |
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| title | A recovery method and device for threshold voltage of a memory |
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