SOLAR CELL
The present invention discloses a solar cell. The solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon lay...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JUIUNG HSIAO CHUN-MING YEH CHUN-HENG CHEN CHEN-HSUN DU CHAONG LIN CHORNG-JYE HUANG |
| description | The present invention discloses a solar cell. The solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of thesecond region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode isdisposed on the first region of the doped polysilicon layer.
本发明公开了一种太阳能电池，包括硅基板、钝化结构以及金属电极。钝化结构设置于硅基板的表面上且包括隧穿层与多晶硅掺杂层。隧穿层位于所述硅基板的所述表面上，多晶硅掺杂层位于隧穿层上且包括厚度不同的第一区以及第二区，且第一区的厚度大于第二区的厚度，其中第一区的厚度在50nm～500nm之间，第二区的厚度大于0且在250nm以下。金属电 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN109728103A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN109728103A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN109728103A3</originalsourceid><addsrcrecordid>eNrjZOAK9vdxDFJwdvXx4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgaW5kYWhgbGjsbEqAEATLwbsA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SOLAR CELL</title><source>esp@cenet</source><creator>JUIUNG HSIAO ; CHUN-MING YEH ; CHUN-HENG CHEN ; CHEN-HSUN DU ; CHAONG LIN ; CHORNG-JYE HUANG</creator><creatorcontrib>JUIUNG HSIAO ; CHUN-MING YEH ; CHUN-HENG CHEN ; CHEN-HSUN DU ; CHAONG LIN ; CHORNG-JYE HUANG</creatorcontrib><description>The present invention discloses a solar cell. The solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of thesecond region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode isdisposed on the first region of the doped polysilicon layer.
本发明公开了一种太阳能电池，包括硅基板、钝化结构以及金属电极。钝化结构设置于硅基板的表面上且包括隧穿层与多晶硅掺杂层。隧穿层位于所述硅基板的所述表面上，多晶硅掺杂层位于隧穿层上且包括厚度不同的第一区以及第二区，且第一区的厚度大于第二区的厚度，其中第一区的厚度在50nm～500nm之间，第二区的厚度大于0且在250nm以下。金属电</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190507&DB=EPODOC&CC=CN&NR=109728103A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190507&DB=EPODOC&CC=CN&NR=109728103A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUIUNG HSIAO</creatorcontrib><creatorcontrib>CHUN-MING YEH</creatorcontrib><creatorcontrib>CHUN-HENG CHEN</creatorcontrib><creatorcontrib>CHEN-HSUN DU</creatorcontrib><creatorcontrib>CHAONG LIN</creatorcontrib><creatorcontrib>CHORNG-JYE HUANG</creatorcontrib><title>SOLAR CELL</title><description>The present invention discloses a solar cell. The solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of thesecond region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode isdisposed on the first region of the doped polysilicon layer.
本发明公开了一种太阳能电池，包括硅基板、钝化结构以及金属电极。钝化结构设置于硅基板的表面上且包括隧穿层与多晶硅掺杂层。隧穿层位于所述硅基板的所述表面上，多晶硅掺杂层位于隧穿层上且包括厚度不同的第一区以及第二区，且第一区的厚度大于第二区的厚度，其中第一区的厚度在50nm～500nm之间，第二区的厚度大于0且在250nm以下。金属电</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAK9vdxDFJwdvXx4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgaW5kYWhgbGjsbEqAEATLwbsA</recordid><startdate>20190507</startdate><enddate>20190507</enddate><creator>JUIUNG HSIAO</creator><creator>CHUN-MING YEH</creator><creator>CHUN-HENG CHEN</creator><creator>CHEN-HSUN DU</creator><creator>CHAONG LIN</creator><creator>CHORNG-JYE HUANG</creator><scope>EVB</scope></search><sort><creationdate>20190507</creationdate><title>SOLAR CELL</title><author>JUIUNG HSIAO ; CHUN-MING YEH ; CHUN-HENG CHEN ; CHEN-HSUN DU ; CHAONG LIN ; CHORNG-JYE HUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109728103A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUIUNG HSIAO</creatorcontrib><creatorcontrib>CHUN-MING YEH</creatorcontrib><creatorcontrib>CHUN-HENG CHEN</creatorcontrib><creatorcontrib>CHEN-HSUN DU</creatorcontrib><creatorcontrib>CHAONG LIN</creatorcontrib><creatorcontrib>CHORNG-JYE HUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUIUNG HSIAO</au><au>CHUN-MING YEH</au><au>CHUN-HENG CHEN</au><au>CHEN-HSUN DU</au><au>CHAONG LIN</au><au>CHORNG-JYE HUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLAR CELL</title><date>2019-05-07</date><risdate>2019</risdate><abstract>The present invention discloses a solar cell. The solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of thesecond region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode isdisposed on the first region of the doped polysilicon layer.
本发明公开了一种太阳能电池，包括硅基板、钝化结构以及金属电极。钝化结构设置于硅基板的表面上且包括隧穿层与多晶硅掺杂层。隧穿层位于所述硅基板的所述表面上，多晶硅掺杂层位于隧穿层上且包括厚度不同的第一区以及第二区，且第一区的厚度大于第二区的厚度，其中第一区的厚度在50nm～500nm之间，第二区的厚度大于0且在250nm以下。金属电</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN109728103A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SOLAR CELL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T12%3A10%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JUIUNG%20HSIAO&rft.date=2019-05-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN109728103A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |