SEMICONDUCTOR DEVICE

The present invention provides a semiconductor device capable of inhibiting defects generated in interfaces of an oxide semiconductor and an insulation film and achieving high reliability and high migration rate. The semiconductor device comprises: a control electrode; an oxide semiconductor layer containing at least one of indium (In) and tin (Sn); an insulation film arranged between the controlelectrode and the oxide semiconductor layer and containing the silicon oxide; and a metal oxide film arranged between the insulation film and the oxide semiconductor, connected with the insulation film and the oxide semiconductor and containing at least one selected from a group consisting of gallium (Ga), tungsten (W), germanium (Ge), aluminum (Al), molybdenum (Mo), and titanium (Ti). 本发明提供抑制在氧化物半导体与绝缘膜的界面中产生的缺陷、实现高可靠性且高迁移率的半导体装置。半导体装置具备：控制电极；氧化物半导体层，其包含铟(In)和锡(Sn)中的至少任种；绝缘膜，其设置于控制电极与氧化物半导体层之间，包含氧化硅；和金属氧化物膜，其设置在绝缘膜与氧化物半导体层之间，与绝缘膜和氧化物半导体层相接，包含选自由镓(Ga)、钨(W)、锗(Ge)、铝(Al)、钼(Mo)和钛(Ti)组成的组中的至少种。