Method for selectively preparing suede on crystal silicon wafer surface
The invention discloses a method for selectively preparing suede on a crystal silicon wafer surface by implementing chemical solution corrosion. The method for selectively preparing suede on the crystal silicon wafer surface by implementing chemical solution corrosion is different from the existing...
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creator | YU SEN QIN JING JIA JI |
description | The invention discloses a method for selectively preparing suede on a crystal silicon wafer surface by implementing chemical solution corrosion. The method for selectively preparing suede on the crystal silicon wafer surface by implementing chemical solution corrosion is different from the existing method for directly adding sueding additives in the chemical corrosion sueding solution in general use, before preparing the suede by implementing the chemical solution corrosion on the crystal silicon wafer, the sueding additives are coated on the crystal silicon wafer surface needing to be flocked. The sueding additives coated on the crystal silicon wafer surface do not react with the crystal silicon wafer, and the chemical corrosion solution wets the crystal silicon wafer surface coated by the sueding additives, and then the suede is prepared by implementing the chemical corrosion on the surface of the crystal silicon wafer surface.
本发明公开了种在晶体硅片表面实施化学溶液腐蚀制备绒面的方法。本发明所公开的在晶体硅片表面实施化学溶液腐蚀制备绒面的方法是,与目前普遍采用的把制绒添加剂直接加入到 |
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本发明公开了种在晶体硅片表面实施化学溶液腐蚀制备绒面的方法。本发明所公开的在晶体硅片表面实施化学溶液腐蚀制备绒面的方法是,与目前普遍采用的把制绒添加剂直接加入到</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190305&DB=EPODOC&CC=CN&NR=109427930A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190305&DB=EPODOC&CC=CN&NR=109427930A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU SEN QIN</creatorcontrib><creatorcontrib>JING JIA JI</creatorcontrib><title>Method for selectively preparing suede on crystal silicon wafer surface</title><description>The invention discloses a method for selectively preparing suede on a crystal silicon wafer surface by implementing chemical solution corrosion. The method for selectively preparing suede on the crystal silicon wafer surface by implementing chemical solution corrosion is different from the existing method for directly adding sueding additives in the chemical corrosion sueding solution in general use, before preparing the suede by implementing the chemical solution corrosion on the crystal silicon wafer, the sueding additives are coated on the crystal silicon wafer surface needing to be flocked. The sueding additives coated on the crystal silicon wafer surface do not react with the crystal silicon wafer, and the chemical corrosion solution wets the crystal silicon wafer surface coated by the sueding additives, and then the suede is prepared by implementing the chemical corrosion on the surface of the crystal silicon wafer surface.
本发明公开了种在晶体硅片表面实施化学溶液腐蚀制备绒面的方法。本发明所公开的在晶体硅片表面实施化学溶液腐蚀制备绒面的方法是,与目前普遍采用的把制绒添加剂直接加入到</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3TS3JyE9RSMsvUihOzUlNLsksS82pVCgoSi1ILMrMS1coLk1NSVXIz1NILqosLknMUSjOzMlMBvLLE9NSgZpKi9ISk1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcQFQSV5qSbyzn6GBpYmRuaWxgaMxMWoAl5M0UQ</recordid><startdate>20190305</startdate><enddate>20190305</enddate><creator>YU SEN QIN</creator><creator>JING JIA JI</creator><scope>EVB</scope></search><sort><creationdate>20190305</creationdate><title>Method for selectively preparing suede on crystal silicon wafer surface</title><author>YU SEN QIN ; JING JIA JI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109427930A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YU SEN QIN</creatorcontrib><creatorcontrib>JING JIA JI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU SEN QIN</au><au>JING JIA JI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for selectively preparing suede on crystal silicon wafer surface</title><date>2019-03-05</date><risdate>2019</risdate><abstract>The invention discloses a method for selectively preparing suede on a crystal silicon wafer surface by implementing chemical solution corrosion. The method for selectively preparing suede on the crystal silicon wafer surface by implementing chemical solution corrosion is different from the existing method for directly adding sueding additives in the chemical corrosion sueding solution in general use, before preparing the suede by implementing the chemical solution corrosion on the crystal silicon wafer, the sueding additives are coated on the crystal silicon wafer surface needing to be flocked. The sueding additives coated on the crystal silicon wafer surface do not react with the crystal silicon wafer, and the chemical corrosion solution wets the crystal silicon wafer surface coated by the sueding additives, and then the suede is prepared by implementing the chemical corrosion on the surface of the crystal silicon wafer surface.
本发明公开了种在晶体硅片表面实施化学溶液腐蚀制备绒面的方法。本发明所公开的在晶体硅片表面实施化学溶液腐蚀制备绒面的方法是,与目前普遍采用的把制绒添加剂直接加入到</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Method for selectively preparing suede on crystal silicon wafer surface |
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