Preparation method of CoFe2O4 magnetic thin film
The invention provides a method for adopting pulse laser to deposit a CoFe2O4 magnetic thin film on a Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) single-crystal substrate. The CoFe2O4 magnetic thin film with dense and uniform thin film particles and obvious magnetoelectric effect is prepared, the obvious in-pla...
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| creator | FENG MING LI HAIBO WANG AOPEI LIU MEI ZHAO XUE XU HANG |
| description | The invention provides a method for adopting pulse laser to deposit a CoFe2O4 magnetic thin film on a Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) single-crystal substrate. The CoFe2O4 magnetic thin film with dense and uniform thin film particles and obvious magnetoelectric effect is prepared, the obvious in-plane anisotropy is obtained, when an in-place magnetic field is in different directions of the thin film, the coercive field of the thin film changes obviously, direct-current voltage and alternating-current voltage are adopted for regulating the change of magneto-optical kerr signals, and the resultshows that the heterojunction of the thin film shows the obvious inverse magnetoelectric coupling effect induced by strain.
种在Pb(MgNb)O-PbTiO(PMN-PT)单晶基片上采用脉冲激光沉积CoFeO磁性薄膜的方法，制备薄膜颗粒致密、均匀且磁电效应明显的钴铁氧体铁磁薄膜，获得了明显的面内各向异性，外加面内磁场沿着薄膜不同方向时，薄膜的矫顽场产生了明显的变化，分别采用直流和交流电压调控磁光克尔信号的变化，结果表明薄膜异质结展示了明显的应变诱导的逆磁电耦合效应。 |
| format | Patent |
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种在Pb(MgNb)O-PbTiO(PMN-PT)单晶基片上采用脉冲激光沉积CoFeO磁性薄膜的方法，制备薄膜颗粒致密、均匀且磁电效应明显的钴铁氧体铁磁薄膜，获得了明显的面内各向异性，外加面内磁场沿着薄膜不同方向时，薄膜的矫顽场产生了明显的变化，分别采用直流和交流电压调控磁光克尔信号的变化，结果表明薄膜异质结展示了明显的应变诱导的逆磁电耦合效应。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INDUCTANCES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MAGNETS ; METALLURGY ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSFORMERS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190219&DB=EPODOC&CC=CN&NR=109355625A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190219&DB=EPODOC&CC=CN&NR=109355625A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FENG MING</creatorcontrib><creatorcontrib>LI HAIBO</creatorcontrib><creatorcontrib>WANG AOPEI</creatorcontrib><creatorcontrib>LIU MEI</creatorcontrib><creatorcontrib>ZHAO XUE</creatorcontrib><creatorcontrib>XU HANG</creatorcontrib><title>Preparation method of CoFe2O4 magnetic thin film</title><description>The invention provides a method for adopting pulse laser to deposit a CoFe2O4 magnetic thin film on a Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) single-crystal substrate. The CoFe2O4 magnetic thin film with dense and uniform thin film particles and obvious magnetoelectric effect is prepared, the obvious in-plane anisotropy is obtained, when an in-place magnetic field is in different directions of the thin film, the coercive field of the thin film changes obviously, direct-current voltage and alternating-current voltage are adopted for regulating the change of magneto-optical kerr signals, and the resultshows that the heterojunction of the thin film shows the obvious inverse magnetoelectric coupling effect induced by strain.
种在Pb(MgNb)O-PbTiO(PMN-PT)单晶基片上采用脉冲激光沉积CoFeO磁性薄膜的方法，制备薄膜颗粒致密、均匀且磁电效应明显的钴铁氧体铁磁薄膜，获得了明显的面内各向异性，外加面内磁场沿着薄膜不同方向时，薄膜的矫顽场产生了明显的变化，分别采用直流和交流电压调控磁光克尔信号的变化，结果表明薄膜异质结展示了明显的应变诱导的逆磁电耦合效应。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAIKEotSCxKLMnMz1PITS3JyE9RyE9TcM53SzXyN1HITUzPSy3JTFYoycjMU0jLzMnlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyalAHfHOfoYGlsampmZGpo7GxKgBAAThKm8</recordid><startdate>20190219</startdate><enddate>20190219</enddate><creator>FENG MING</creator><creator>LI HAIBO</creator><creator>WANG AOPEI</creator><creator>LIU MEI</creator><creator>ZHAO XUE</creator><creator>XU HANG</creator><scope>EVB</scope></search><sort><creationdate>20190219</creationdate><title>Preparation method of CoFe2O4 magnetic thin film</title><author>FENG MING ; LI HAIBO ; WANG AOPEI ; LIU MEI ; ZHAO XUE ; XU HANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109355625A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>FENG MING</creatorcontrib><creatorcontrib>LI HAIBO</creatorcontrib><creatorcontrib>WANG AOPEI</creatorcontrib><creatorcontrib>LIU MEI</creatorcontrib><creatorcontrib>ZHAO XUE</creatorcontrib><creatorcontrib>XU HANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FENG MING</au><au>LI HAIBO</au><au>WANG AOPEI</au><au>LIU MEI</au><au>ZHAO XUE</au><au>XU HANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of CoFe2O4 magnetic thin film</title><date>2019-02-19</date><risdate>2019</risdate><abstract>The invention provides a method for adopting pulse laser to deposit a CoFe2O4 magnetic thin film on a Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) single-crystal substrate. The CoFe2O4 magnetic thin film with dense and uniform thin film particles and obvious magnetoelectric effect is prepared, the obvious in-plane anisotropy is obtained, when an in-place magnetic field is in different directions of the thin film, the coercive field of the thin film changes obviously, direct-current voltage and alternating-current voltage are adopted for regulating the change of magneto-optical kerr signals, and the resultshows that the heterojunction of the thin film shows the obvious inverse magnetoelectric coupling effect induced by strain.
种在Pb(MgNb)O-PbTiO(PMN-PT)单晶基片上采用脉冲激光沉积CoFeO磁性薄膜的方法，制备薄膜颗粒致密、均匀且磁电效应明显的钴铁氧体铁磁薄膜，获得了明显的面内各向异性，外加面内磁场沿着薄膜不同方向时，薄膜的矫顽场产生了明显的变化，分别采用直流和交流电压调控磁光克尔信号的变化，结果表明薄膜异质结展示了明显的应变诱导的逆磁电耦合效应。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS |
| title | Preparation method of CoFe2O4 magnetic thin film |
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