Magnetron sputtering device
The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a carrying table and a gas averaging pipe used for being connected with a gas injecting device; the gasaveraging pipe is in a shape of a circular arc; the carrying table is located in the circumference w...
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| creator | AI HAIPING QIAO NAN HU JIAHUI LI PENG DING YU WANG KUN ZHOU YINGYING LIU WANGPING LYU MENGPU ZHANG WUBIN |
| description | The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a carrying table and a gas averaging pipe used for being connected with a gas injecting device; the gasaveraging pipe is in a shape of a circular arc; the carrying table is located in the circumference where the gas averaging pipe is located; the gas averaging pipe is provided with a plurality of gasoutflow holes which are distributed along the circumference where the gas averaging pipe is located; and the gas outflow direction of the plurality of gas outflow holes points to the circle center ofthe circumference where the gas averaging pipe is located. By arranging the gas averaging pipe in the arc shape, the carrying table is located in the circumference where the gas averaging pipe is located; and due to the fact that the gas averaging pipe is provided with the plurality of gas outflow holes, in this way, when epitaxial wafers grow on the carrying table, the gas averaging pipe is connected with the gas injecting |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN109321889A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN109321889A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN109321889A3</originalsourceid><addsrcrecordid>eNrjZJD2TUzPSy0pys9TKC4oLSlJLcrMS1dISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyalArfHOfoYGlsZGhhYWlo7GxKgBAJfuI8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Magnetron sputtering device</title><source>esp@cenet</source><creator>AI HAIPING ; QIAO NAN ; HU JIAHUI ; LI PENG ; DING YU ; WANG KUN ; ZHOU YINGYING ; LIU WANGPING ; LYU MENGPU ; ZHANG WUBIN</creator><creatorcontrib>AI HAIPING ; QIAO NAN ; HU JIAHUI ; LI PENG ; DING YU ; WANG KUN ; ZHOU YINGYING ; LIU WANGPING ; LYU MENGPU ; ZHANG WUBIN</creatorcontrib><description>The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a carrying table and a gas averaging pipe used for being connected with a gas injecting device; the gasaveraging pipe is in a shape of a circular arc; the carrying table is located in the circumference where the gas averaging pipe is located; the gas averaging pipe is provided with a plurality of gasoutflow holes which are distributed along the circumference where the gas averaging pipe is located; and the gas outflow direction of the plurality of gas outflow holes points to the circle center ofthe circumference where the gas averaging pipe is located. By arranging the gas averaging pipe in the arc shape, the carrying table is located in the circumference where the gas averaging pipe is located; and due to the fact that the gas averaging pipe is provided with the plurality of gas outflow holes, in this way, when epitaxial wafers grow on the carrying table, the gas averaging pipe is connected with the gas injecting</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190212&DB=EPODOC&CC=CN&NR=109321889A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190212&DB=EPODOC&CC=CN&NR=109321889A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AI HAIPING</creatorcontrib><creatorcontrib>QIAO NAN</creatorcontrib><creatorcontrib>HU JIAHUI</creatorcontrib><creatorcontrib>LI PENG</creatorcontrib><creatorcontrib>DING YU</creatorcontrib><creatorcontrib>WANG KUN</creatorcontrib><creatorcontrib>ZHOU YINGYING</creatorcontrib><creatorcontrib>LIU WANGPING</creatorcontrib><creatorcontrib>LYU MENGPU</creatorcontrib><creatorcontrib>ZHANG WUBIN</creatorcontrib><title>Magnetron sputtering device</title><description>The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a carrying table and a gas averaging pipe used for being connected with a gas injecting device; the gasaveraging pipe is in a shape of a circular arc; the carrying table is located in the circumference where the gas averaging pipe is located; the gas averaging pipe is provided with a plurality of gasoutflow holes which are distributed along the circumference where the gas averaging pipe is located; and the gas outflow direction of the plurality of gas outflow holes points to the circle center ofthe circumference where the gas averaging pipe is located. By arranging the gas averaging pipe in the arc shape, the carrying table is located in the circumference where the gas averaging pipe is located; and due to the fact that the gas averaging pipe is provided with the plurality of gas outflow holes, in this way, when epitaxial wafers grow on the carrying table, the gas averaging pipe is connected with the gas injecting</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD2TUzPSy0pys9TKC4oLSlJLcrMS1dISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyalArfHOfoYGlsZGhhYWlo7GxKgBAJfuI8Q</recordid><startdate>20190212</startdate><enddate>20190212</enddate><creator>AI HAIPING</creator><creator>QIAO NAN</creator><creator>HU JIAHUI</creator><creator>LI PENG</creator><creator>DING YU</creator><creator>WANG KUN</creator><creator>ZHOU YINGYING</creator><creator>LIU WANGPING</creator><creator>LYU MENGPU</creator><creator>ZHANG WUBIN</creator><scope>EVB</scope></search><sort><creationdate>20190212</creationdate><title>Magnetron sputtering device</title><author>AI HAIPING ; QIAO NAN ; HU JIAHUI ; LI PENG ; DING YU ; WANG KUN ; ZHOU YINGYING ; LIU WANGPING ; LYU MENGPU ; ZHANG WUBIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109321889A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>AI HAIPING</creatorcontrib><creatorcontrib>QIAO NAN</creatorcontrib><creatorcontrib>HU JIAHUI</creatorcontrib><creatorcontrib>LI PENG</creatorcontrib><creatorcontrib>DING YU</creatorcontrib><creatorcontrib>WANG KUN</creatorcontrib><creatorcontrib>ZHOU YINGYING</creatorcontrib><creatorcontrib>LIU WANGPING</creatorcontrib><creatorcontrib>LYU MENGPU</creatorcontrib><creatorcontrib>ZHANG WUBIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AI HAIPING</au><au>QIAO NAN</au><au>HU JIAHUI</au><au>LI PENG</au><au>DING YU</au><au>WANG KUN</au><au>ZHOU YINGYING</au><au>LIU WANGPING</au><au>LYU MENGPU</au><au>ZHANG WUBIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetron sputtering device</title><date>2019-02-12</date><risdate>2019</risdate><abstract>The invention discloses a magnetron sputtering device. The magnetron sputtering device comprises a carrying table and a gas averaging pipe used for being connected with a gas injecting device; the gasaveraging pipe is in a shape of a circular arc; the carrying table is located in the circumference where the gas averaging pipe is located; the gas averaging pipe is provided with a plurality of gasoutflow holes which are distributed along the circumference where the gas averaging pipe is located; and the gas outflow direction of the plurality of gas outflow holes points to the circle center ofthe circumference where the gas averaging pipe is located. By arranging the gas averaging pipe in the arc shape, the carrying table is located in the circumference where the gas averaging pipe is located; and due to the fact that the gas averaging pipe is provided with the plurality of gas outflow holes, in this way, when epitaxial wafers grow on the carrying table, the gas averaging pipe is connected with the gas injecting</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Magnetron sputtering device |
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