Diamond device and manufacture method thereof
The invention is applicable to the field of semiconductor technology, and provides a diamond device and a preparation method thereof. The preparation method comprises the following steps of: depositing a graphene catalytic layer on a source electrode region and a drain electrode region of the diamon...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention is applicable to the field of semiconductor technology, and provides a diamond device and a preparation method thereof. The preparation method comprises the following steps of: depositing a graphene catalytic layer on a source electrode region and a drain electrode region of the diamond; Annealing a diamond deposited with a graphene catalytic layer to form a graphene layer in a source electrode region and a drain electrode region of the diamond; A metal lay is deposited on that upper surface of the region correspond to the graphene layer and the source electrode region to form anohmic contact source electrode, and a metal layer is deposited on the upper surface of the region correspond to the drain electrode region to form an ohmic contact drain electrode. The invention canreduce the ohmic contact resistance of the source electrode and the drain electrode of the diamond device, improve the frequency performance of the diamond device, and further improve the performanceof the diamond device.
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