METHOD FOR DEPOSITING PROTECTION FILM OF LIGHT-EMITTING ELEMENT
The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection film on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additi...
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| creator | KIM JONG-HWAN YOON SUNG-YEAN LEE HONG-JAE SHIM WOO-PIL LEE WOO-JIN LEE DON-HEE |
| description | The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection film on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection film on the first protection film by means of the plasma-enhanced chemical vapor deposition method.
本发明是有关于种发光二极管的保护膜沉积方法，上述保护膜沉积方法包含于基板的发光二极管的上部通过原子层沉积制程沉积第保护膜的步骤；以及于上述第保护膜的上部通过化学气相沉积制程沉积至少个追加保护膜的步骤。 |
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本发明是有关于种发光二极管的保护膜沉积方法，上述保护膜沉积方法包含于基板的发光二极管的上部通过原子层沉积制程沉积第保护膜的步骤；以及于上述第保护膜的上部通过化学气相沉积制程沉积至少个追加保护膜的步骤。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190104&DB=EPODOC&CC=CN&NR=109155343A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190104&DB=EPODOC&CC=CN&NR=109155343A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JONG-HWAN</creatorcontrib><creatorcontrib>YOON SUNG-YEAN</creatorcontrib><creatorcontrib>LEE HONG-JAE</creatorcontrib><creatorcontrib>SHIM WOO-PIL</creatorcontrib><creatorcontrib>LEE WOO-JIN</creatorcontrib><creatorcontrib>LEE DON-HEE</creatorcontrib><title>METHOD FOR DEPOSITING PROTECTION FILM OF LIGHT-EMITTING ELEMENT</title><description>The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection film on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection film on the first protection film by means of the plasma-enhanced chemical vapor deposition method.
本发明是有关于种发光二极管的保护膜沉积方法，上述保护膜沉积方法包含于基板的发光二极管的上部通过原子层沉积制程沉积第保护膜的步骤；以及于上述第保护膜的上部通过化学气相沉积制程沉积至少个追加保护膜的步骤。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3dQ3x8HdRcPMPUnBxDfAP9gzx9HNXCAjyD3F1DvH091Nw8_TxVfB3U_DxdPcI0XX19QwBq3D1cfV19QvhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBpaGpqbGJsaOxsSoAQCNDCp2</recordid><startdate>20190104</startdate><enddate>20190104</enddate><creator>KIM JONG-HWAN</creator><creator>YOON SUNG-YEAN</creator><creator>LEE HONG-JAE</creator><creator>SHIM WOO-PIL</creator><creator>LEE WOO-JIN</creator><creator>LEE DON-HEE</creator><scope>EVB</scope></search><sort><creationdate>20190104</creationdate><title>METHOD FOR DEPOSITING PROTECTION FILM OF LIGHT-EMITTING ELEMENT</title><author>KIM JONG-HWAN ; YOON SUNG-YEAN ; LEE HONG-JAE ; SHIM WOO-PIL ; LEE WOO-JIN ; LEE DON-HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109155343A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JONG-HWAN</creatorcontrib><creatorcontrib>YOON SUNG-YEAN</creatorcontrib><creatorcontrib>LEE HONG-JAE</creatorcontrib><creatorcontrib>SHIM WOO-PIL</creatorcontrib><creatorcontrib>LEE WOO-JIN</creatorcontrib><creatorcontrib>LEE DON-HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JONG-HWAN</au><au>YOON SUNG-YEAN</au><au>LEE HONG-JAE</au><au>SHIM WOO-PIL</au><au>LEE WOO-JIN</au><au>LEE DON-HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR DEPOSITING PROTECTION FILM OF LIGHT-EMITTING ELEMENT</title><date>2019-01-04</date><risdate>2019</risdate><abstract>The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection film on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection film on the first protection film by means of the plasma-enhanced chemical vapor deposition method.
本发明是有关于种发光二极管的保护膜沉积方法，上述保护膜沉积方法包含于基板的发光二极管的上部通过原子层沉积制程沉积第保护膜的步骤；以及于上述第保护膜的上部通过化学气相沉积制程沉积至少个追加保护膜的步骤。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR DEPOSITING PROTECTION FILM OF LIGHT-EMITTING ELEMENT |
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