A silicon nitride coupled germanium detector structure and a preparation method thereof

The invention discloses a silicon nitride coupled germanium detector structure, which is of a lateral photodiode structure, and comprises a silicon substrate; a silicon oxide layer is deposited on theupper surface of the silicon substrate; the silicon oxide layer comprises: a first doped region and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEI JIANGBIN, CHEN CHANGHUA, QIU CHAO, BAI YANFEI, GAN FUWAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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