Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same
The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing th...
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| creator | LEE SANG-ICK JEON SANG-YONG KIM MYONG-WOON CHO A-RA YIM SANG-JUN LEE KANG-YONG LIM HAENG-DON CHAE WON-MOOK |
| description | The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
本发明涉及新型过渡金属化合物、其制造方法、包含其的含过渡金属薄膜蒸镀用组合物、利用含过渡金属薄膜蒸镀用组合物的含过渡金属薄膜和含过渡金属薄膜的制造方法，本发明的过渡金属化合物的热稳定性高，挥发性高，储存稳定性高，从而将其用作前体能够容易地制造出高密度和高纯度的含过渡金属薄膜。 |
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本发明涉及新型过渡金属化合物、其制造方法、包含其的含过渡金属薄膜蒸镀用组合物、利用含过渡金属薄膜蒸镀用组合物的含过渡金属薄膜和含过渡金属薄膜的制造方法，本发明的过渡金属化合物的热稳定性高，挥发性高，储存稳定性高，从而将其用作前体能够容易地制造出高密度和高纯度的含过渡金属薄膜。</description><language>chi ; eng</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181221&DB=EPODOC&CC=CN&NR=109071571A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181221&DB=EPODOC&CC=CN&NR=109071571A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE SANG-ICK</creatorcontrib><creatorcontrib>JEON SANG-YONG</creatorcontrib><creatorcontrib>KIM MYONG-WOON</creatorcontrib><creatorcontrib>CHO A-RA</creatorcontrib><creatorcontrib>YIM SANG-JUN</creatorcontrib><creatorcontrib>LEE KANG-YONG</creatorcontrib><creatorcontrib>LIM HAENG-DON</creatorcontrib><creatorcontrib>CHAE WON-MOOK</creatorcontrib><title>Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same</title><description>The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
本发明涉及新型过渡金属化合物、其制造方法、包含其的含过渡金属薄膜蒸镀用组合物、利用含过渡金属薄膜蒸镀用组合物的含过渡金属薄膜和含过渡金属薄膜的制造方法，本发明的过渡金属化合物的热稳定性高，挥发性高，储存稳定性高，从而将其用作前体能够容易地制造出高密度和高纯度的含过渡金属薄膜。</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwkAQRK-xEPUf1j6BBJGQUoJiZZU-LHcbc5DbO-7Wz_CfDSaCWFkNM_Nm1urZRuRkxXoGR4IjaO-Cf7DJIEQKGPHTDd6ADBSp9zEDZDOjy3gKwdBs-Q7yc5trz4KW391gJ96OLoOvNKGjrVr1OCbaLbpR-8u5ba75dNxRCqiJSbrmVhZ1UZXHqjwd_mFeSAxPQg</recordid><startdate>20181221</startdate><enddate>20181221</enddate><creator>LEE SANG-ICK</creator><creator>JEON SANG-YONG</creator><creator>KIM MYONG-WOON</creator><creator>CHO A-RA</creator><creator>YIM SANG-JUN</creator><creator>LEE KANG-YONG</creator><creator>LIM HAENG-DON</creator><creator>CHAE WON-MOOK</creator><scope>EVB</scope></search><sort><creationdate>20181221</creationdate><title>Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same</title><author>LEE SANG-ICK ; JEON SANG-YONG ; KIM MYONG-WOON ; CHO A-RA ; YIM SANG-JUN ; LEE KANG-YONG ; LIM HAENG-DON ; CHAE WON-MOOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109071571A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE SANG-ICK</creatorcontrib><creatorcontrib>JEON SANG-YONG</creatorcontrib><creatorcontrib>KIM MYONG-WOON</creatorcontrib><creatorcontrib>CHO A-RA</creatorcontrib><creatorcontrib>YIM SANG-JUN</creatorcontrib><creatorcontrib>LEE KANG-YONG</creatorcontrib><creatorcontrib>LIM HAENG-DON</creatorcontrib><creatorcontrib>CHAE WON-MOOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE SANG-ICK</au><au>JEON SANG-YONG</au><au>KIM MYONG-WOON</au><au>CHO A-RA</au><au>YIM SANG-JUN</au><au>LEE KANG-YONG</au><au>LIM HAENG-DON</au><au>CHAE WON-MOOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same</title><date>2018-12-21</date><risdate>2018</risdate><abstract>The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
本发明涉及新型过渡金属化合物、其制造方法、包含其的含过渡金属薄膜蒸镀用组合物、利用含过渡金属薄膜蒸镀用组合物的含过渡金属薄膜和含过渡金属薄膜的制造方法，本发明的过渡金属化合物的热稳定性高，挥发性高，储存稳定性高，从而将其用作前体能够容易地制造出高密度和高纯度的含过渡金属薄膜。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same |
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