CAPACITOR AND METHOD OF MANUFACTURING THE SAME
The invention provides a capacitor. The capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer d...
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| creator | YOO DONG SIK LIM SEUNG MO PARK NO IL HAN SEUNG HUN SHIN HYUN HO RYOU JEONG HOON |
| description | The invention provides a capacitor. The capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer disposed on the one surface of the substrate and in the first trenches. The first capacitor layer includes a first dielectric layer and first and second electrodes disposed on opposing sides thereof. The capacitance layer includes a plurality of second trenches penetrating from one surface of the capacitance layer to an interior of the capacitance layer, and a second capacitor layer disposed on the one surface of the capacitance layer and in the second trenches. The second capacitor layer includes a second dielectric layer and third and fourth electrodes disposed on opposing sides thereof. A method of manufacturing the capacitor is also provided.
本发明提供种电容器及制造该电容器的方法。所述电容器包括主体，所述主体包括基板和设置在所述基板上的电容层。所述基板包括：多个第沟，从所述基板的 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN108735719A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN108735719A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN108735719A3</originalsourceid><addsrcrecordid>eNrjZNBzdgxwdPYM8Q9ScPRzUfB1DfHwd1Hwd1PwdfQLdXN0DgkN8vRzVwjxcFUIdvR15WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgYW5sam5oaWjsbEqAEAw24lgQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CAPACITOR AND METHOD OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>YOO DONG SIK ; LIM SEUNG MO ; PARK NO IL ; HAN SEUNG HUN ; SHIN HYUN HO ; RYOU JEONG HOON</creator><creatorcontrib>YOO DONG SIK ; LIM SEUNG MO ; PARK NO IL ; HAN SEUNG HUN ; SHIN HYUN HO ; RYOU JEONG HOON</creatorcontrib><description>The invention provides a capacitor. The capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer disposed on the one surface of the substrate and in the first trenches. The first capacitor layer includes a first dielectric layer and first and second electrodes disposed on opposing sides thereof. The capacitance layer includes a plurality of second trenches penetrating from one surface of the capacitance layer to an interior of the capacitance layer, and a second capacitor layer disposed on the one surface of the capacitance layer and in the second trenches. The second capacitor layer includes a second dielectric layer and third and fourth electrodes disposed on opposing sides thereof. A method of manufacturing the capacitor is also provided.
本发明提供种电容器及制造该电容器的方法。所述电容器包括主体，所述主体包括基板和设置在所述基板上的电容层。所述基板包括：多个第沟，从所述基板的</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181102&DB=EPODOC&CC=CN&NR=108735719A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181102&DB=EPODOC&CC=CN&NR=108735719A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOO DONG SIK</creatorcontrib><creatorcontrib>LIM SEUNG MO</creatorcontrib><creatorcontrib>PARK NO IL</creatorcontrib><creatorcontrib>HAN SEUNG HUN</creatorcontrib><creatorcontrib>SHIN HYUN HO</creatorcontrib><creatorcontrib>RYOU JEONG HOON</creatorcontrib><title>CAPACITOR AND METHOD OF MANUFACTURING THE SAME</title><description>The invention provides a capacitor. The capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer disposed on the one surface of the substrate and in the first trenches. The first capacitor layer includes a first dielectric layer and first and second electrodes disposed on opposing sides thereof. The capacitance layer includes a plurality of second trenches penetrating from one surface of the capacitance layer to an interior of the capacitance layer, and a second capacitor layer disposed on the one surface of the capacitance layer and in the second trenches. The second capacitor layer includes a second dielectric layer and third and fourth electrodes disposed on opposing sides thereof. A method of manufacturing the capacitor is also provided.
本发明提供种电容器及制造该电容器的方法。所述电容器包括主体，所述主体包括基板和设置在所述基板上的电容层。所述基板包括：多个第沟，从所述基板的</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBzdgxwdPYM8Q9ScPRzUfB1DfHwd1Hwd1PwdfQLdXN0DgkN8vRzVwjxcFUIdvR15WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgYW5sam5oaWjsbEqAEAw24lgQ</recordid><startdate>20181102</startdate><enddate>20181102</enddate><creator>YOO DONG SIK</creator><creator>LIM SEUNG MO</creator><creator>PARK NO IL</creator><creator>HAN SEUNG HUN</creator><creator>SHIN HYUN HO</creator><creator>RYOU JEONG HOON</creator><scope>EVB</scope></search><sort><creationdate>20181102</creationdate><title>CAPACITOR AND METHOD OF MANUFACTURING THE SAME</title><author>YOO DONG SIK ; LIM SEUNG MO ; PARK NO IL ; HAN SEUNG HUN ; SHIN HYUN HO ; RYOU JEONG HOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108735719A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOO DONG SIK</creatorcontrib><creatorcontrib>LIM SEUNG MO</creatorcontrib><creatorcontrib>PARK NO IL</creatorcontrib><creatorcontrib>HAN SEUNG HUN</creatorcontrib><creatorcontrib>SHIN HYUN HO</creatorcontrib><creatorcontrib>RYOU JEONG HOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOO DONG SIK</au><au>LIM SEUNG MO</au><au>PARK NO IL</au><au>HAN SEUNG HUN</au><au>SHIN HYUN HO</au><au>RYOU JEONG HOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CAPACITOR AND METHOD OF MANUFACTURING THE SAME</title><date>2018-11-02</date><risdate>2018</risdate><abstract>The invention provides a capacitor. The capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer disposed on the one surface of the substrate and in the first trenches. The first capacitor layer includes a first dielectric layer and first and second electrodes disposed on opposing sides thereof. The capacitance layer includes a plurality of second trenches penetrating from one surface of the capacitance layer to an interior of the capacitance layer, and a second capacitor layer disposed on the one surface of the capacitance layer and in the second trenches. The second capacitor layer includes a second dielectric layer and third and fourth electrodes disposed on opposing sides thereof. A method of manufacturing the capacitor is also provided.
本发明提供种电容器及制造该电容器的方法。所述电容器包括主体，所述主体包括基板和设置在所述基板上的电容层。所述基板包括：多个第沟，从所述基板的</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | CAPACITOR AND METHOD OF MANUFACTURING THE SAME |
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