Dry textured black silicon post-cleaning process

The invention discloses a dry textured black silicon post-cleaning process. The dry textured black silicon post-cleaning process includes: removing reaction by-products on a surface of a silicon waferby using HF; sequentially using deionized water, a KOH solution, deionized water, a HF/HCL mixed solution, and deionized water to clean the silicon wafer; and performing dewatering and drying to obtain a black silicon finished product. The invention greatly reduces the difficulty of sewage treatment and the waste discharge amount by avoiding the use of HNO3 and BOE containing N element; the micro-tip structures which is cleaned by alkali after dry-type texturing are reduced, which can bring a certain effect; and the process time can be greatly shortened, and the production capacity is greatlyimproved. 本发明公开了种干法制绒黑硅后清洗工艺，包括：使用HF去除硅片表面的反应副产物，再依次使用去离子水、KOH溶液、去离子水、HF/HCL的混合溶液、去离子水清洗硅片后脱水烘干得到黑硅成品。本发明由于避免了使用含有N元素的HNO及BOE而极大降低了污水处理难度及排废量；干法制绒后使用碱清洗的微观尖端组织减少，可带来定程度的提效，工艺时间可大大减少并大大提高产能。