RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FORMING METHOD THEREOF

A resistive random access memory (RRAM) structure and its forming method are provided, which includes an interlayer dielectric layer on a substrate. The interlayer dielectric layer is a dielectrics including oxygen. The RRAM structure also includes an oxygen-diffusion barrier layer on the interlayer dielectric layer, and a bottom electrode layer on the oxygen-diffusion barrier layer. The bottom electrode layer includes a first electrode layer, a first oxygen-rich layer on the first electrode layer, and a second electrode layer on the first oxygen-rich layer. The RRAM structure also includes aresistance switching layer on the bottom electrode layer, and a top electrode layer on the resistance switching layer. 本发明提供种电阻式随机存取存储器结构及其形成方法。此电阻式随机存取存储器结构包括：层间介电层，形成于基板上，其中层间介电层为包括氧的介电材料；氧扩散阻障层，形成于层间介电层上；底电极层，形成于氧扩散阻障层上。底电极层包括：第电极层，形成于氧扩散阻障层上；第富氧层，形成于第电极层上；以及第二电极层，形成于第富氧层上。此电阻式随机存取存储器结构亦包括：电阻转态层，形成于底电极层上；以及顶电极层，形成于电阻转态层上。本发明的氧扩散阻障层能够阻挡从层间介电层扩散进入第电极层的氧，从而可改善电阻不均与转换不均的问题，进而提升产品的良率及信赖性。