An OFET drive based on a universal insulation layer and a method for preparing the same

The invention provides an OFET drive based on a universal insulation layer. The OFET drive comprises a grid electrode (1), an insulation layer (2), an active layer (3), a source electrode (4) and a drain electrode (5). The insulation layer (2) is a universal material PVP; the surface of the grid electrode (1) is covered with the PVP layer (2) which is covered with the active layer (3). The activelayer (3) is a P-type active layer Pentance (31) and an N-type active layer F16CuPc (32). The surface of the insulation layer (2) is covered with the Pentance and the F16CuPc, and thus an ordered crystal organic thin film is formed. The method comprises the steps of: 1, preprocessing an ITO substrate; 2, spinning-coating the substrate with the insulation layer; 3, performing vapor deposition of the Pentance and the F16CuPc; 4, preparing the source and drain electrodes. The performance of the OFET drive is improved, the manufacture difficulty of the OFET drive is reduced and the manufacture process is simple; the OFET