Preparation method of source field plate of GaN-based HEMT device and HEMT device
The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of t...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CUI YUXING MO JIANGHUI CUI YONG SU YANFEN WANG CHUANBAO SONG JIEJING |
| description | The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of the device successively; a part corresponding to a first area is removed from the SiO2 layer; the surface, toward a gate electrode region, of a part, corresponding to a second gate-drain area, in the residual area of the SiO2 layer is an inclined surface with a first inclination angle; parts corresponding to the source and drain electrode regions are removed from the SiO2 layer as well as the SiN layer successively; a metal layer in a third thickness is grown in a part, corresponding to a sourcefield plate area, in the upper surface of the device; and the metal layer covers the inclined surface of the part, corresponding to the second gate-drain area, of the SiO2 layer. The field plate prepared by the method is of a |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN108389791A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN108389791A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN108389791A3</originalsourceid><addsrcrecordid>eNrjZAgMKEotSCxKLMnMz1PITS3JyE9RyE9TKM4vLUpOVUjLTM1JUSjISSxJBYm6J_rpJiUWp6YoeLj6hiikpJZlAhUl5qHweRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoYGFsYWluaWhozExagD9ITXA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Preparation method of source field plate of GaN-based HEMT device and HEMT device</title><source>esp@cenet</source><creator>CUI YUXING ; MO JIANGHUI ; CUI YONG ; SU YANFEN ; WANG CHUANBAO ; SONG JIEJING</creator><creatorcontrib>CUI YUXING ; MO JIANGHUI ; CUI YONG ; SU YANFEN ; WANG CHUANBAO ; SONG JIEJING</creatorcontrib><description>The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of the device successively; a part corresponding to a first area is removed from the SiO2 layer; the surface, toward a gate electrode region, of a part, corresponding to a second gate-drain area, in the residual area of the SiO2 layer is an inclined surface with a first inclination angle; parts corresponding to the source and drain electrode regions are removed from the SiO2 layer as well as the SiN layer successively; a metal layer in a third thickness is grown in a part, corresponding to a sourcefield plate area, in the upper surface of the device; and the metal layer covers the inclined surface of the part, corresponding to the second gate-drain area, of the SiO2 layer. The field plate prepared by the method is of a</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180810&DB=EPODOC&CC=CN&NR=108389791A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180810&DB=EPODOC&CC=CN&NR=108389791A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CUI YUXING</creatorcontrib><creatorcontrib>MO JIANGHUI</creatorcontrib><creatorcontrib>CUI YONG</creatorcontrib><creatorcontrib>SU YANFEN</creatorcontrib><creatorcontrib>WANG CHUANBAO</creatorcontrib><creatorcontrib>SONG JIEJING</creatorcontrib><title>Preparation method of source field plate of GaN-based HEMT device and HEMT device</title><description>The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of the device successively; a part corresponding to a first area is removed from the SiO2 layer; the surface, toward a gate electrode region, of a part, corresponding to a second gate-drain area, in the residual area of the SiO2 layer is an inclined surface with a first inclination angle; parts corresponding to the source and drain electrode regions are removed from the SiO2 layer as well as the SiN layer successively; a metal layer in a third thickness is grown in a part, corresponding to a sourcefield plate area, in the upper surface of the device; and the metal layer covers the inclined surface of the part, corresponding to the second gate-drain area, of the SiO2 layer. The field plate prepared by the method is of a</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgMKEotSCxKLMnMz1PITS3JyE9RyE9TKM4vLUpOVUjLTM1JUSjISSxJBYm6J_rpJiUWp6YoeLj6hiikpJZlAhUl5qHweRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoYGFsYWluaWhozExagD9ITXA</recordid><startdate>20180810</startdate><enddate>20180810</enddate><creator>CUI YUXING</creator><creator>MO JIANGHUI</creator><creator>CUI YONG</creator><creator>SU YANFEN</creator><creator>WANG CHUANBAO</creator><creator>SONG JIEJING</creator><scope>EVB</scope></search><sort><creationdate>20180810</creationdate><title>Preparation method of source field plate of GaN-based HEMT device and HEMT device</title><author>CUI YUXING ; MO JIANGHUI ; CUI YONG ; SU YANFEN ; WANG CHUANBAO ; SONG JIEJING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108389791A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CUI YUXING</creatorcontrib><creatorcontrib>MO JIANGHUI</creatorcontrib><creatorcontrib>CUI YONG</creatorcontrib><creatorcontrib>SU YANFEN</creatorcontrib><creatorcontrib>WANG CHUANBAO</creatorcontrib><creatorcontrib>SONG JIEJING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CUI YUXING</au><au>MO JIANGHUI</au><au>CUI YONG</au><au>SU YANFEN</au><au>WANG CHUANBAO</au><au>SONG JIEJING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of source field plate of GaN-based HEMT device and HEMT device</title><date>2018-08-10</date><risdate>2018</risdate><abstract>The invention provides a preparation method of a source field plate of a GaN-based HEMT device and the HEMT device suitable for the technical field of semiconductors. The method comprises that a SiN layer in a first thickness and a SiO2 layer in a second thickness are grown in the upper surface of the device successively; a part corresponding to a first area is removed from the SiO2 layer; the surface, toward a gate electrode region, of a part, corresponding to a second gate-drain area, in the residual area of the SiO2 layer is an inclined surface with a first inclination angle; parts corresponding to the source and drain electrode regions are removed from the SiO2 layer as well as the SiN layer successively; a metal layer in a third thickness is grown in a part, corresponding to a sourcefield plate area, in the upper surface of the device; and the metal layer covers the inclined surface of the part, corresponding to the second gate-drain area, of the SiO2 layer. The field plate prepared by the method is of a</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN108389791A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Preparation method of source field plate of GaN-based HEMT device and HEMT device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T16%3A09%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CUI%20YUXING&rft.date=2018-08-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN108389791A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |