PERFORMANCE OF ADDITIONAL REFRESH OPERATIONS DURING SELF-REFRESH MODE
Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide cont...
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creator | BAINS KULJIT S HALBERT JOHN B FUX SHAY |
description | Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide currentrefresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.
实施例通常涉及在自刷新模式期间附加刷新操作的执行。存储器设备的实施例包括:个或多个存储体;模式寄存器组,该模式寄存器组包括第组模式寄存器位;以及用来为存储器设备提供控制操作的控制逻辑,所述操作包括在刷新信用模式下针对个或多个存储体的操作。该控制逻辑用来响应于自刷新命令的接收来执行个或多个额外刷新周期,该自刷新命令用来提供当前刷新状态信息,并且用来在执行个或多个额外刷新周期之后关于经修改的刷新状态在第组模式寄存器位中存储信息。 |
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实施例通常涉及在自刷新模式期间附加刷新操作的执行。存储器设备的实施例包括:个或多个存储体;模式寄存器组,该模式寄存器组包括第组模式寄存器位;以及用来为存储器设备提供控制操作的控制逻辑,所述操作包括在刷新信用模式下针对个或多个存储体的操作。该控制逻辑用来响应于自刷新命令的接收来执行个或多个额外刷新周期,该自刷新命令用来提供当前刷新状态信息,并且用来在执行个或多个额外刷新周期之后关于经修改的刷新状态在第组模式寄存器位中存储信息。</description><language>chi ; eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180803&DB=EPODOC&CC=CN&NR=108369819A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180803&DB=EPODOC&CC=CN&NR=108369819A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BAINS KULJIT S</creatorcontrib><creatorcontrib>HALBERT JOHN B</creatorcontrib><creatorcontrib>FUX SHAY</creatorcontrib><title>PERFORMANCE OF ADDITIONAL REFRESH OPERATIONS DURING SELF-REFRESH MODE</title><description>Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide currentrefresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.
实施例通常涉及在自刷新模式期间附加刷新操作的执行。存储器设备的实施例包括:个或多个存储体;模式寄存器组,该模式寄存器组包括第组模式寄存器位;以及用来为存储器设备提供控制操作的控制逻辑,所述操作包括在刷新信用模式下针对个或多个存储体的操作。该控制逻辑用来响应于自刷新命令的接收来执行个或多个额外刷新周期,该自刷新命令用来提供当前刷新状态信息,并且用来在执行个或多个额外刷新周期之后关于经修改的刷新状态在第组模式寄存器位中存储信息。</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANcA1y8w_ydfRzdlXwd1NwdHHxDPH093P0UQhydQtyDfZQ8AcqcQSJBSu4hAZ5-rkrBLv6uOnCpH39XVx5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8s5-hgYWxmaWFoaWjMTFqAI05LC0</recordid><startdate>20180803</startdate><enddate>20180803</enddate><creator>BAINS KULJIT S</creator><creator>HALBERT JOHN B</creator><creator>FUX SHAY</creator><scope>EVB</scope></search><sort><creationdate>20180803</creationdate><title>PERFORMANCE OF ADDITIONAL REFRESH OPERATIONS DURING SELF-REFRESH MODE</title><author>BAINS KULJIT S ; HALBERT JOHN B ; FUX SHAY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108369819A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>BAINS KULJIT S</creatorcontrib><creatorcontrib>HALBERT JOHN B</creatorcontrib><creatorcontrib>FUX SHAY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BAINS KULJIT S</au><au>HALBERT JOHN B</au><au>FUX SHAY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PERFORMANCE OF ADDITIONAL REFRESH OPERATIONS DURING SELF-REFRESH MODE</title><date>2018-08-03</date><risdate>2018</risdate><abstract>Embodiments are generally directed to performance of additional refresh operations during self-refresh mode. An embodiment of a memory device includes one or more memory banks, a mode register set, the mode register set including a first set of mode register bits, and a control logic to provide control operations for the memory device, the operations including refresh operations for the one or more memory banks in a refresh credit mode. The control logic is to perform one or more extra refresh cycles in response to receipt of a self-refresh command, the self-refresh command to provide currentrefresh status information, and is to store information in the first set of mode register bits regarding a modified refresh status after the performance of the one or more extra refresh cycles.
实施例通常涉及在自刷新模式期间附加刷新操作的执行。存储器设备的实施例包括:个或多个存储体;模式寄存器组,该模式寄存器组包括第组模式寄存器位;以及用来为存储器设备提供控制操作的控制逻辑,所述操作包括在刷新信用模式下针对个或多个存储体的操作。该控制逻辑用来响应于自刷新命令的接收来执行个或多个额外刷新周期,该自刷新命令用来提供当前刷新状态信息,并且用来在执行个或多个额外刷新周期之后关于经修改的刷新状态在第组模式寄存器位中存储信息。</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | PERFORMANCE OF ADDITIONAL REFRESH OPERATIONS DURING SELF-REFRESH MODE |
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