Power component
The invention provides a power component. The power component comprises an action layer, a grid electrode, a source electrode region, a drain electrode region, a first electrical connection structure,a conducting layer and a second electrical connection structure, wherein the action layer comprises...
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| creator | LUO GUOXUAN HUANG ZONGYI |
| description | The invention provides a power component. The power component comprises an action layer, a grid electrode, a source electrode region, a drain electrode region, a first electrical connection structure,a conducting layer and a second electrical connection structure, wherein the action layer comprises a body region and a drift region, the body region and the drift region are transversely adjacent and form a PN junction in the width direction of a channel, and the action layer is provided with an upper surface; the grid electrode is formed on the upper surface, and the PN junction is positioned below the grid electrode; the source electrode region is formed in the action layer between the body region and the upper surface; the drain electrode region is formed in the action layer between the drift region and the upper surface; the first electrical connection structure is formed on the upper surface and is used for being electrically connected with the source electrode region; the conducting layer is formed on the |
| format | Patent |
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The power component comprises an action layer, a grid electrode, a source electrode region, a drain electrode region, a first electrical connection structure,a conducting layer and a second electrical connection structure, wherein the action layer comprises a body region and a drift region, the body region and the drift region are transversely adjacent and form a PN junction in the width direction of a channel, and the action layer is provided with an upper surface; the grid electrode is formed on the upper surface, and the PN junction is positioned below the grid electrode; the source electrode region is formed in the action layer between the body region and the upper surface; the drain electrode region is formed in the action layer between the drift region and the upper surface; the first electrical connection structure is formed on the upper surface and is used for being electrically connected with the source electrode region; the conducting layer is formed on the</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180724&DB=EPODOC&CC=CN&NR=108321201A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180724&DB=EPODOC&CC=CN&NR=108321201A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LUO GUOXUAN</creatorcontrib><creatorcontrib>HUANG ZONGYI</creatorcontrib><title>Power component</title><description>The invention provides a power component. The power component comprises an action layer, a grid electrode, a source electrode region, a drain electrode region, a first electrical connection structure,a conducting layer and a second electrical connection structure, wherein the action layer comprises a body region and a drift region, the body region and the drift region are transversely adjacent and form a PN junction in the width direction of a channel, and the action layer is provided with an upper surface; the grid electrode is formed on the upper surface, and the PN junction is positioned below the grid electrode; the source electrode region is formed in the action layer between the body region and the upper surface; the drain electrode region is formed in the action layer between the drift region and the upper surface; the first electrical connection structure is formed on the upper surface and is used for being electrically connected with the source electrode region; the conducting layer is formed on the</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAPyC9PLVJIzs8tyM9LzSvhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBhbGRoZGBoaOxsSoAQCJix7a</recordid><startdate>20180724</startdate><enddate>20180724</enddate><creator>LUO GUOXUAN</creator><creator>HUANG ZONGYI</creator><scope>EVB</scope></search><sort><creationdate>20180724</creationdate><title>Power component</title><author>LUO GUOXUAN ; HUANG ZONGYI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108321201A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LUO GUOXUAN</creatorcontrib><creatorcontrib>HUANG ZONGYI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LUO GUOXUAN</au><au>HUANG ZONGYI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power component</title><date>2018-07-24</date><risdate>2018</risdate><abstract>The invention provides a power component. The power component comprises an action layer, a grid electrode, a source electrode region, a drain electrode region, a first electrical connection structure,a conducting layer and a second electrical connection structure, wherein the action layer comprises a body region and a drift region, the body region and the drift region are transversely adjacent and form a PN junction in the width direction of a channel, and the action layer is provided with an upper surface; the grid electrode is formed on the upper surface, and the PN junction is positioned below the grid electrode; the source electrode region is formed in the action layer between the body region and the upper surface; the drain electrode region is formed in the action layer between the drift region and the upper surface; the first electrical connection structure is formed on the upper surface and is used for being electrically connected with the source electrode region; the conducting layer is formed on the</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN108321201A |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Power component |
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