Preparation method of super-junction semiconductor device

The invention discloses a preparation method of a super-junction semiconductor device. The preparation method comprises the steps of providing an N type substrate; preparing a super-junction structureon the N type substrate, and putting the super-junction structure into storage; and obtaining a pre-fabricated super-junction structure, and performing surface DMOS preparation on the super-junctionstructure. The manufacturing process comprises preparation of the super-junction structure and preparation of the surface DMOS; the prepared super-junction structure can be used for all super-junctionproducts, and then specific product types are selected subsequently according to client requirement for product preparation, thereby shortening product delivery period and improving production efficiency. 本发明公开了种超结半导体器件的制备方法，该方法包括：提供N型衬底；在所述N型衬底上制备超结结构，并将所述超结结构入库存储；获取预制的所述超结结构，在所述超结结构上进行表面DMOS的制备。本发明将制造周期分为超结结构制备和表面DMOS制备两部分，制备后的超结结构可以供所有超结产品使用，后续根据客户需求选择特定产品类型进行产品制备，从而可以减少产品出货周期，提高生产效率。