Ion implanter and method implanting ion into semiconductor substrate

An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIH CHAO-LI, LI MING-HSING, CHOU HONG-HSING, CHIEN FANGI, LIN TSUNG-MIN
Format: Patent
Sprache:chi ; eng
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