METHOD OF REMOVING AN ETCH MASK
An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned targe...
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| creator | JUI-MING SHIH CHUN-HAN CHU TSUNG-MIN CHUO BI-MING YEN NAIIA CHEN PING-JUNG HUANG |
| description | An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution. The embodiment of the invention relates to a method for eliminating the etch mask.
实施例的方法包括在目标层上方形成图案化的蚀刻掩模并使用图案化的蚀刻掩模作为掩模来图案化目标层以形成图案化的目标层。该方法还包括在图案化的蚀刻掩模和图案化的目标层上执行第清洁工艺，第清洁工艺包括第溶液。该方法附加地包括执行第二清洁工艺以去除图案化的蚀刻掩模并形成暴露的 |
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实施例的方法包括在目标层上方形成图案化的蚀刻掩模并使用图案化的蚀刻掩模作为掩模来图案化目标层以形成图案化的目标层。该方法还包括在图案化的蚀刻掩模和图案化的目标层上执行第清洁工艺，第清洁工艺包括第溶液。该方法附加地包括执行第二清洁工艺以去除图案化的蚀刻掩模并形成暴露的</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180612&DB=EPODOC&CC=CN&NR=108155088A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180612&DB=EPODOC&CC=CN&NR=108155088A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUI-MING SHIH</creatorcontrib><creatorcontrib>CHUN-HAN CHU</creatorcontrib><creatorcontrib>TSUNG-MIN CHUO</creatorcontrib><creatorcontrib>BI-MING YEN</creatorcontrib><creatorcontrib>NAIIA CHEN</creatorcontrib><creatorcontrib>PING-JUNG HUANG</creatorcontrib><title>METHOD OF REMOVING AN ETCH MASK</title><description>An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution. The embodiment of the invention relates to a method for eliminating the etch mask.
实施例的方法包括在目标层上方形成图案化的蚀刻掩模并使用图案化的蚀刻掩模作为掩模来图案化目标层以形成图案化的目标层。该方法还包括在图案化的蚀刻掩模和图案化的目标层上执行第清洁工艺，第清洁工艺包括第溶液。该方法附加地包括执行第二清洁工艺以去除图案化的蚀刻掩模并形成暴露的</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD3dQ3x8HdR8HdTCHL19Q_z9HNXcPRTcA1x9lDwdQz25mFgTUvMKU7lhdLcDIpuIEnd1IL8-NTigsTk1LzUknhnP0MDC0NTUwMLC0djYtQAALDcIUo</recordid><startdate>20180612</startdate><enddate>20180612</enddate><creator>JUI-MING SHIH</creator><creator>CHUN-HAN CHU</creator><creator>TSUNG-MIN CHUO</creator><creator>BI-MING YEN</creator><creator>NAIIA CHEN</creator><creator>PING-JUNG HUANG</creator><scope>EVB</scope></search><sort><creationdate>20180612</creationdate><title>METHOD OF REMOVING AN ETCH MASK</title><author>JUI-MING SHIH ; CHUN-HAN CHU ; TSUNG-MIN CHUO ; BI-MING YEN ; NAIIA CHEN ; PING-JUNG HUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN108155088A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUI-MING SHIH</creatorcontrib><creatorcontrib>CHUN-HAN CHU</creatorcontrib><creatorcontrib>TSUNG-MIN CHUO</creatorcontrib><creatorcontrib>BI-MING YEN</creatorcontrib><creatorcontrib>NAIIA CHEN</creatorcontrib><creatorcontrib>PING-JUNG HUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUI-MING SHIH</au><au>CHUN-HAN CHU</au><au>TSUNG-MIN CHUO</au><au>BI-MING YEN</au><au>NAIIA CHEN</au><au>PING-JUNG HUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF REMOVING AN ETCH MASK</title><date>2018-06-12</date><risdate>2018</risdate><abstract>An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution. The embodiment of the invention relates to a method for eliminating the etch mask.
实施例的方法包括在目标层上方形成图案化的蚀刻掩模并使用图案化的蚀刻掩模作为掩模来图案化目标层以形成图案化的目标层。该方法还包括在图案化的蚀刻掩模和图案化的目标层上执行第清洁工艺，第清洁工艺包括第溶液。该方法附加地包括执行第二清洁工艺以去除图案化的蚀刻掩模并形成暴露的</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF REMOVING AN ETCH MASK |
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