semiconductor device

A semiconductor device is provided. The semiconductor device includes a first active pattern and a second active pattern on a substrate, a first gate electrode and a second gate electrode respectivelyacross the first active pattern and the second active pattern, a first insulation pattern between and separating the first and second gate electrodes, a gate spacer on a sidewall of the first gate electrode, on a sidewall of the second gate electrode, and on a sidewall of the first insulation pattern, and a second insulation pattern between the gate spacer and the sidewall of the first insulationpattern, wherein the first gate electrode, the first insulation pattern, and the second gate electrode are arranged along a first direction, and the gate spacer extends in the first direction. 本公开提供了半导体器件。种半导体器件包括：在基板上的第有源图案和第二有源图案；第栅电极和第二栅电极，分别跨过第有源图案和第二有源图案；第绝缘图案，在第栅电极和第二栅电极之间并使第栅电极和第二栅电极分隔开；栅间隔物，在第栅电极的侧壁上、在第二栅电极的侧壁上以及在第绝缘图案的侧壁上；以及第二绝缘图案，在栅间隔物与第绝缘图案的侧壁之间，其中第栅电极、第绝缘图案和第二栅电极沿第方向布置，并且其中栅间隔物在第方向上延伸。