Silicon wafer cleaning method

Silicon wafer cleaning method

The invention discloses a silicon wafer cleaning method which comprises the following steps that a silicon wafer to be cleaned is placed in the ozone water for first water washing, and an oxidation film is formed on the surface of the silicon wafer; the silicon wafer is placed in the preheated hydro...

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Hauptverfasser: ZHANG XINYU, HUANG JIDE, HOU YUEYUE, JIN HAO, JIN JINGSHENG
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHANG XINYU
HUANG JIDE
HOU YUEYUE
JIN HAO
JIN JINGSHENG
description The invention discloses a silicon wafer cleaning method which comprises the following steps that a silicon wafer to be cleaned is placed in the ozone water for first water washing, and an oxidation film is formed on the surface of the silicon wafer; the silicon wafer is placed in the preheated hydrofluoric acid solution for first pickling, so as to remove the oxidation film, wherein the ratio of water to hydrofluoric acid in the hydrofluoric acid solution is in the range of 20:1 to 10:1 and the endpoint value is included; the temperature of the preheated hydrofluoric acid solution is 40 DEG C-80 DEG C, and the endpoint value is included; the silicon wafer is placed into the deionized water for second rinsing, so as to clean the hydrofluoric acid solution on the surface of the silicon wafer; the silicon wafer is placed into a mixed solution of hydrofluoric acid and hydrochloric acid for second pickling, so as to remove metal ions on the surface of the silicon wafer; and the silicon wafer is placed into the dei
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Silicon wafer cleaning method
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