FILM FORMING APPARATUS AND FILM FORMING METHOD
Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 g...
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| creator | HIROKI EHARA MASAYA ODAGIRI HIDEO NAKAMURA TSUYOSHI TAKAHASHI YUKIHIRO TAMEGAI HIROTAKA KUWADA KAZUYOSHI YAMAZAKI YOSHIKAZU IDENO |
| description | Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of thechamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.
本发明提供种能够获得即使膜厚薄而膜中氯也少的良好的TiN膜的成膜装置和成膜方法。通过ALD法在晶片(W)上成膜TiN膜的成膜装置(100)，包括：收纳晶片W的腔室(1)；向腔室(1)内部供给由TiCl气体形成的钛原料气体、由NH气体形成的氮化气体和吹扫气体的气体供给机构(5)；对腔室(1)内进行排气的排气机构(42)；和控制部(6)，其控制气体供给机构(5)以使得向晶片(W)交替供给TiCl气体和NH气体，气体供给机构(5)具有加热NH气体并使其状态变化的NH气体加热单元(65)，向腔室(1)内供 |
| format | Patent |
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本发明提供种能够获得即使膜厚薄而膜中氯也少的良好的TiN膜的成膜装置和成膜方法。通过ALD法在晶片(W)上成膜TiN膜的成膜装置(100)，包括：收纳晶片W的腔室(1)；向腔室(1)内部供给由TiCl气体形成的钛原料气体、由NH气体形成的氮化气体和吹扫气体的气体供给机构(5)；对腔室(1)内进行排气的排气机构(42)；和控制部(6)，其控制气体供给机构(5)以使得向晶片(W)交替供给TiCl气体和NH气体，气体供给机构(5)具有加热NH气体并使其状态变化的NH气体加热单元(65)，向腔室(1)内供</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180501&DB=EPODOC&CC=CN&NR=107978541A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180501&DB=EPODOC&CC=CN&NR=107978541A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIROKI EHARA</creatorcontrib><creatorcontrib>MASAYA ODAGIRI</creatorcontrib><creatorcontrib>HIDEO NAKAMURA</creatorcontrib><creatorcontrib>TSUYOSHI TAKAHASHI</creatorcontrib><creatorcontrib>YUKIHIRO TAMEGAI</creatorcontrib><creatorcontrib>HIROTAKA KUWADA</creatorcontrib><creatorcontrib>KAZUYOSHI YAMAZAKI</creatorcontrib><creatorcontrib>YOSHIKAZU IDENO</creatorcontrib><title>FILM FORMING APPARATUS AND FILM FORMING METHOD</title><description>Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of thechamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.
本发明提供种能够获得即使膜厚薄而膜中氯也少的良好的TiN膜的成膜装置和成膜方法。通过ALD法在晶片(W)上成膜TiN膜的成膜装置(100)，包括：收纳晶片W的腔室(1)；向腔室(1)内部供给由TiCl气体形成的钛原料气体、由NH气体形成的氮化气体和吹扫气体的气体供给机构(5)；对腔室(1)内进行排气的排气机构(42)；和控制部(6)，其控制气体供给机构(5)以使得向晶片(W)交替供给TiCl气体和NH气体，气体供给机构(5)具有加热NH气体并使其状态变化的NH气体加热单元(65)，向腔室(1)内供</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBz8_TxVXDzD_L19HNXcAwIcAxyDAkNVnD0c1FAkfJ1DfHwd-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYG5pbmFqYmho7GxKgBANFvJaI</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>HIROKI EHARA</creator><creator>MASAYA ODAGIRI</creator><creator>HIDEO NAKAMURA</creator><creator>TSUYOSHI TAKAHASHI</creator><creator>YUKIHIRO TAMEGAI</creator><creator>HIROTAKA KUWADA</creator><creator>KAZUYOSHI YAMAZAKI</creator><creator>YOSHIKAZU IDENO</creator><scope>EVB</scope></search><sort><creationdate>20180501</creationdate><title>FILM FORMING APPARATUS AND FILM FORMING METHOD</title><author>HIROKI EHARA ; MASAYA ODAGIRI ; HIDEO NAKAMURA ; TSUYOSHI TAKAHASHI ; YUKIHIRO TAMEGAI ; HIROTAKA KUWADA ; KAZUYOSHI YAMAZAKI ; YOSHIKAZU IDENO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN107978541A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HIROKI EHARA</creatorcontrib><creatorcontrib>MASAYA ODAGIRI</creatorcontrib><creatorcontrib>HIDEO NAKAMURA</creatorcontrib><creatorcontrib>TSUYOSHI TAKAHASHI</creatorcontrib><creatorcontrib>YUKIHIRO TAMEGAI</creatorcontrib><creatorcontrib>HIROTAKA KUWADA</creatorcontrib><creatorcontrib>KAZUYOSHI YAMAZAKI</creatorcontrib><creatorcontrib>YOSHIKAZU IDENO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIROKI EHARA</au><au>MASAYA ODAGIRI</au><au>HIDEO NAKAMURA</au><au>TSUYOSHI TAKAHASHI</au><au>YUKIHIRO TAMEGAI</au><au>HIROTAKA KUWADA</au><au>KAZUYOSHI YAMAZAKI</au><au>YOSHIKAZU IDENO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM FORMING APPARATUS AND FILM FORMING METHOD</title><date>2018-05-01</date><risdate>2018</risdate><abstract>Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of thechamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.
本发明提供种能够获得即使膜厚薄而膜中氯也少的良好的TiN膜的成膜装置和成膜方法。通过ALD法在晶片(W)上成膜TiN膜的成膜装置(100)，包括：收纳晶片W的腔室(1)；向腔室(1)内部供给由TiCl气体形成的钛原料气体、由NH气体形成的氮化气体和吹扫气体的气体供给机构(5)；对腔室(1)内进行排气的排气机构(42)；和控制部(6)，其控制气体供给机构(5)以使得向晶片(W)交替供给TiCl气体和NH气体，气体供给机构(5)具有加热NH气体并使其状态变化的NH气体加热单元(65)，向腔室(1)内供</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM FORMING APPARATUS AND FILM FORMING METHOD |
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