HF Module
The invention relates to an HF module, which includes a bulk semiconductor substrate with at least one integrated HF component integrated in a first main surface region of the bulk semiconductor substrate. The bulk semiconductor substrate is further provided with a second main surface region and a s...
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| creator | CARSTEN AHRENS CARSTEN VON KOBLINSKI KATHARINA UMMINGER |
| description | The invention relates to an HF module, which includes a bulk semiconductor substrate with at least one integrated HF component integrated in a first main surface region of the bulk semiconductor substrate. The bulk semiconductor substrate is further provided with a second main surface region and a side region. The HF component further comprises an insulator structure surrounding a side surface region of the bulk semiconductor substrate. The insulator structure further includes first and second main surface regions that are opposite to each other. The HF module further includes a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure. The HF module further includes a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator s |
| format | Patent |
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The bulk semiconductor substrate is further provided with a second main surface region and a side region. The HF component further comprises an insulator structure surrounding a side surface region of the bulk semiconductor substrate. The insulator structure further includes first and second main surface regions that are opposite to each other. The HF module further includes a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure. The HF module further includes a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator s</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180424&DB=EPODOC&CC=CN&NR=107958878A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180424&DB=EPODOC&CC=CN&NR=107958878A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CARSTEN AHRENS</creatorcontrib><creatorcontrib>CARSTEN VON KOBLINSKI</creatorcontrib><creatorcontrib>KATHARINA UMMINGER</creatorcontrib><title>HF Module</title><description>The invention relates to an HF module, which includes a bulk semiconductor substrate with at least one integrated HF component integrated in a first main surface region of the bulk semiconductor substrate. The bulk semiconductor substrate is further provided with a second main surface region and a side region. The HF component further comprises an insulator structure surrounding a side surface region of the bulk semiconductor substrate. The insulator structure further includes first and second main surface regions that are opposite to each other. The HF module further includes a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure. The HF module further includes a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator s</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD0cFPwzU8pzUnlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBuaWphYW5haOxsSoAQBq7hwu</recordid><startdate>20180424</startdate><enddate>20180424</enddate><creator>CARSTEN AHRENS</creator><creator>CARSTEN VON KOBLINSKI</creator><creator>KATHARINA UMMINGER</creator><scope>EVB</scope></search><sort><creationdate>20180424</creationdate><title>HF Module</title><author>CARSTEN AHRENS ; CARSTEN VON KOBLINSKI ; KATHARINA UMMINGER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN107958878A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CARSTEN AHRENS</creatorcontrib><creatorcontrib>CARSTEN VON KOBLINSKI</creatorcontrib><creatorcontrib>KATHARINA UMMINGER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CARSTEN AHRENS</au><au>CARSTEN VON KOBLINSKI</au><au>KATHARINA UMMINGER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HF Module</title><date>2018-04-24</date><risdate>2018</risdate><abstract>The invention relates to an HF module, which includes a bulk semiconductor substrate with at least one integrated HF component integrated in a first main surface region of the bulk semiconductor substrate. The bulk semiconductor substrate is further provided with a second main surface region and a side region. The HF component further comprises an insulator structure surrounding a side surface region of the bulk semiconductor substrate. The insulator structure further includes first and second main surface regions that are opposite to each other. The HF module further includes a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure. The HF module further includes a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator s</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | HF Module |
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