Plasma etching method

Plasma etching method

The invention provides a plasma etching method. Chlorine-containing gas is used for carrying out plasma etching on a Ti/Al/Ti laminated layer in a processing container with the inner surface consisting of aluminum-containing substances, so consumption of the aluminum-containing substances is inhibit...

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Hauptverfasser: TAKAFUMI KAMBE, HISASHI YODA
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAKAFUMI KAMBE
HISASHI YODA
description The invention provides a plasma etching method. Chlorine-containing gas is used for carrying out plasma etching on a Ti/Al/Ti laminated layer in a processing container with the inner surface consisting of aluminum-containing substances, so consumption of the aluminum-containing substances is inhibited. The method comprises steps of moving a Ti/Al/Ti laminated layer with a lower layer Ti film, an Al film and an upper layer Ti film into the processing container with the inner surface at least one part of which consisting of aluminum-containing substances; forming a substrate with a patterned corrosion resisting agent on the Ti/Al/Ti laminated layer; and generating plasmas containing etching gas with the chlorine-containing gas and nitrogen, and by taking the corrosion-resisting agent layer as the mask, carrying out etching procedure of plasma etching on the Ti/Al/Ti laminated layer by use of the generated plasmas. 本发明提供种等离子体蚀刻方法，在内表面具有含铝物的处理容器内，使用含氯气体对Ti/Al/Ti叠层膜进行等离子体蚀刻时，抑制含铝物的消耗。本发明的等离子体蚀刻方法包括：向内表面的至少部分由含铝物形成
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Chlorine-containing gas is used for carrying out plasma etching on a Ti/Al/Ti laminated layer in a processing container with the inner surface consisting of aluminum-containing substances, so consumption of the aluminum-containing substances is inhibited. 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Chlorine-containing gas is used for carrying out plasma etching on a Ti/Al/Ti laminated layer in a processing container with the inner surface consisting of aluminum-containing substances, so consumption of the aluminum-containing substances is inhibited. 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Chlorine-containing gas is used for carrying out plasma etching on a Ti/Al/Ti laminated layer in a processing container with the inner surface consisting of aluminum-containing substances, so consumption of the aluminum-containing substances is inhibited. The method comprises steps of moving a Ti/Al/Ti laminated layer with a lower layer Ti film, an Al film and an upper layer Ti film into the processing container with the inner surface at least one part of which consisting of aluminum-containing substances; forming a substrate with a patterned corrosion resisting agent on the Ti/Al/Ti laminated layer; and generating plasmas containing etching gas with the chlorine-containing gas and nitrogen, and by taking the corrosion-resisting agent layer as the mask, carrying out etching procedure of plasma etching on the Ti/Al/Ti laminated layer by use of the generated plasmas. 本发明提供种等离子体蚀刻方法，在内表面具有含铝物的处理容器内，使用含氯气体对Ti/Al/Ti叠层膜进行等离子体蚀刻时，抑制含铝物的消耗。本发明的等离子体蚀刻方法包括：向内表面的至少部分由含铝物形成</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Plasma etching method
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