Semiconductor component, method for processing a substrate and method for producing a semiconductor component

The invention discloses a semiconductor component, a method for processing a substrate and a method for producing a semiconductor component. In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at leastone first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of thebattier layer into the metallization layer. 根据各种实施方式，种方法可以具有以下步骤：在衬底的第区域上构造金属化层，其中，在构造所述金属化层之后，所述衬底的至少个第二区域没有金属化层；在所述金属化层上并且在所述衬底的至少个第二区域上构造阻挡层；借助于将所述阻挡层纳入到所述金属化层中去除所述衬底的至少个第区域中的阻挡层。