New method and system for TSV blind hole filling

The invention discloses a new method and system for TSV blind hole filling. The new method includes the following steps that firstly, a silicon piece with a TSV blind hole is put into deionized water,vacuum suction pretreatment is conducted, and gas in the TSV blind hole is exhausted; secondly, the silicon piece obtained after pretreatment is integrally connected with an electroplating cathode; thirdly, an additive agent, an inhibiting agent and an accelerating agent are added into an electroplating solution, sufficient mixing is conducted, and a suspension electroplating solution is formed;fourthly, the suspension electroplating solution is added into an electroplating bath, an electroplating anode and an electroplating cathode of an electroplating power source are put into the suspension electroplating solution so that the silicon piece can be subjected to standing in the suspension electroplating solution, and the electroplating solution reaches adsorption balance preliminarily inthe TSV blind hole; fifthl